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1. (WO2017131632) MEMRISTIVE ARRAYS WITH OFFSET ELEMENTS
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/131632 International Application No.: PCT/US2016/014887
Publication Date: 03.08.2017 International Filing Date: 26.01.2016
IPC:
G11C 13/00 (2006.01) ,G11C 11/56 (2006.01)
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
13
Digital stores characterised by the use of storage elements not covered by groups G11C11/, G11C23/, or G11C25/173
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
11
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
56
using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
Applicants:
HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP [US/US]; 11445 Compaq Center Drive W. Houston, Texas 77070, US
Inventors:
BUCHANAN, Brent; US
ZHENG, Le; US
STRACHAN, John Paul; US
Agent:
PAGAR, Preetam B.; US
Priority Data:
Title (EN) MEMRISTIVE ARRAYS WITH OFFSET ELEMENTS
(FR) MATRICES DE MEMRISTANCES À ÉLÉMENTS DÉCALÉS
Abstract:
(EN) In one example in accordance with the present disclosure a device is described. The device includes a cross-bar array of memristive elements. Each memristive element has a conductance value. The device also includes a column of offset elements. An offset element is coupled to a row of memristive elements and has a conductance value. The device also includes a number of accumulation elements. An accumulation element is coupled to a column of memristive elements. The accumulation element collects an intermediate output from the column and subtracts from the intermediate output an output from the column of offset elements.
(FR) Un exemple de la présente invention concerne un dispositif. Le dispositif comprend une matrice transversale d'éléments memristifs. Chaque élément memristif a une valeur de conductance. Le dispositif comprend en outre une colonne d'éléments décalés. Un élément décalé est couplé à une ligne d'éléments memristifs et a une valeur de conductance. Le dispositif comprend également un certain nombre d'éléments d'accumulation. Un élément d'accumulation est couplé à une colonne d'éléments memristifs. L'élément d'accumulation collecte une sortie intermédiaire provenant de la colonne et soustrait de la sortie intermédiaire une sortie provenant de la colonne d'éléments décalés.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)