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1. (WO2017131628) MEMRISTIVE BIT CELL WITH SWITCH REGULATING COMPONENTS
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/131628 International Application No.: PCT/US2016/014856
Publication Date: 03.08.2017 International Filing Date: 26.01.2016
IPC:
G11C 13/00 (2006.01) ,G11C 11/56 (2006.01)
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
13
Digital stores characterised by the use of storage elements not covered by groups G11C11/, G11C23/, or G11C25/173
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
11
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
56
using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
Applicants:
HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP [US/US]; 11445 Compaq Center Drive W. Houston, Texas 77070, US
Inventors:
MERCED GRAFALS, Emmanuelle J.; US
BUCHANAN, Brent; US
ZHENG, Le; US
Agent:
PAGAR, Preetam B.; US
Priority Data:
Title (EN) MEMRISTIVE BIT CELL WITH SWITCH REGULATING COMPONENTS
(FR) CELLULE BINAIRE MEMRISTIVE DOTÉE D'ÉLÉMENTS DE RÉGULATION DE COMMUTATION
Abstract:
(EN) In one example in accordance with the present disclosure a memristive bit cell is described. The memristive bit cell includes a memristive device switchable between states. The memristive device is to store information. The memristive bit cell also includes a first switch regulating component coupled to the memristive device. The first switch regulating component enforces compliance of the memristive device with a first property threshold when switching between states in a first direction. The first property threshold corresponds to a state of the memristive device. The memristive bit cell also includes a second switch regulating component coupled to the memristive device. The second switch regulating component enforces compliance of the memristive device with a second property threshold when switching between states in a second direction. The second property threshold corresponds to a state of the memristive device.
(FR) Dans un exemple, la présente invention concerne une cellule binaire memristive. La cellule binaire memristive comprend un dispositif memristif pouvant commuter entre des états. Le dispositif memristif sert à stocker des informations. La cellule binaire memristive comprend également un premier élément de régulation de commutation couplé au dispositif memristif. Le premier élément de régulation de commutation renforce la conformité du dispositif memristif avec un premier seuil de propriété lors d'une commutation entre des états dans une première direction. Le premier seuil de propriété correspond à un état du dispositif memristif. La cellule binaire memristive comprend également un second élément de régulation de commutation couplé au dispositif memristif. Le second élément de régulation de commutation renforce la conformité du dispositif memristif avec un second seuil de propriété lors d'une commutation entre des états dans une seconde direction. Le second seuil de propriété correspond à un état du dispositif memristif.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)