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1. WO2017131584 - MEMORY CELL, MEMORY DEVICE, AND METHODS OF FORMING THE SAME

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CLAIMS

1. A memory cell comprising:

a magnetic pinned layer with a substantially fixed magnetization direction;

a crystalline spacer layer in contact with the magnetic pinned layer;

a magnetic storage layer comprising:

an amorphous interface sub-layer in contact with the crystalline spacer layer, the amorphous interface sub-layer comprising a first alloy of iron (Fe) and at least one element selected from a group consisting of boron (B), silicon (Si), aluminium (Al), and magnesium (Mg); and

an amorphous enhancement sub-layerin contact with the amorphous interface sub-layer, the amorphous enhancement sub-layer comprising a second alloy of iron (Fe) and at least one element selected from a group consisting of boron (B), silicon (Si), aluminium (Al), and magnesium (Mg); and

a cap layer in contact with the amorphous enhancement sub-layer;

wherein a concentration of the at least one further element comprised in the first alloy and a concentration of the at least one further element comprised in the second alloy are different.

2. The memory cell according to claim 1,

wherein the at least one element of the first alloy and the at least one element of the second alloy are the same.

The memory cell according to claim 1,

wherein a concentration of the at least one element of the second alloy is higher than a concentration of the at least one element of the first alloy.

The memory cell according to claim 1,

wherein the amorphous interface sub-layer comprises FeaBbSicAldMge;

wherein the amorphous enhancement sub-layer comprises FeABBSicAlDMgE; and

wherein a sum of b, c, d and e is smaller than a sum of B, C, D and E.

The memory cell according to claim 4,

wherein a is any value between 40 and 90;

wherein a sum of b, c, d and e is any value between 10 and 60; and

wherein a sum of a, b, c, d and e is 100.

The memory cell according to claim 1 ,

wherein the cap layer comprises at least one material selected from a group consisting of molybdenum (Mo), tungsten (W), and magnesium oxide (MgO).

The memory cell according to claim 1,

wherein the spacer layer comprises magnesium oxide (MgO).

A memory device comprising:

a memory cell comprising:

a magnetic pinned layer with a substantially fixed magnetization direction;

a crystalline spacer layer in contact with the magnetic pinned layer;

a magnetic storage layer comprising:

an amorphous interface sub-layer in contact with the crystalline spacer layer, the amorphous interface sub-layer comprising a first alloy of iron (Fe) and at least one element selected from a group consisting of boron (B), silicon (Si), aluminium (Al), and magnesium (Mg); and

an amorphous enhancement sub-layer in contact with the amorphous interface sub-layer, the amorphous enhancement sub-layer comprising a second alloy of iron (Fe) and at least one element selected from a group consisting of boron (B), silicon (Si), aluminium (Al), and magnesium (Mg); and

a cap layer in contact with the amorphous enhancement sub-layer; and

one or more electrodes coupled to the memory cell;

wherein a concentration of the at least one further element comprised in the first alloy and a concentration of the at least one further element comprised in the second alloy are different.

9. A method of forming a memory cell, the method comprising:

forming a magnetic pinned layer with a substantially fixed magnetization direction;

forming a spacer layer in contact with the magnetic pinned layer;

forming a magnetic storage layer, the magnetic storage layer comprising:

an amorphous interface sub-layer in contact with the crystalline spacer layer, the amorphous interface sub-layer comprising a first alloy of iron (Fe) and at least one element selected from a group consisting of boron (B), silicon (Si), aluminium (Al), and magnesium (Mg); and

an amorphous enhancement sub-layer in contact with the amorphous interface sub-layer, the amorphous enhancement layer comprising a second alloy of iron (Fe) and at least one element selected from a group consisting of boron (B), silicon (Si), aluminium (Al), and magnesium (Mg); and

forming a cap layer in contact with the amorphous enhancement sublayer;

wherein a concentration of the at least one further element comprised in the first alloy and a concentration of the at least one further element comprised in the second alloy are different.

10. A method of forming a memory cell according to claim 9, further comprising:

carrying out thermal annealing is at a temperature selected from a range of between 350 °C and 420 °C after forming the magnetic pinned layer, the spacer layer, the magnetic storage layer, and the cap layer.