Search International and National Patent Collections
Some content of this application is unavailable at the moment.
If this situation persists, please contact us atFeedback&Contact
1. (WO2017131584) MEMORY CELL, MEMORY DEVICE, AND METHODS OF FORMING THE SAME
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/131584 International Application No.: PCT/SG2017/050028
Publication Date: 03.08.2017 International Filing Date: 19.01.2017
Chapter 2 Demand Filed: 23.11.2017
IPC:
H01L 43/10 (2006.01) ,G11C 11/15 (2006.01) ,G11C 11/16 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
10
Selection of materials
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
11
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02
using magnetic elements
14
using thin-film elements
15
using multiple magnetic layers
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
11
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02
using magnetic elements
16
using elements in which the storage effect is based on magnetic spin effect
Applicants:
AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH [SG/SG]; 1 Fusionopolis Way, #20-10 Connexis, Singapore 138632, SG
Inventors:
FUKUZAWA, Hideaki; SG
YU, Jun; SG
HAN, Michael; SG
WANG, Xinpeng; SG
BLIZNETSOV, Vladimir; SG
Agent:
VIERING, JENTSCHURA & PARTNER LLP; P.O. Box 1088, Rochor Post Office, Rochor Road, Singapore 911833, SG
Priority Data:
10201600735X29.01.2016SG
Title (EN) MEMORY CELL, MEMORY DEVICE, AND METHODS OF FORMING THE SAME
(FR) CELLULE DE MÉMOIRE, DISPOSITIF DE MÉMOIRE ET LEURS PROCÉDÉS DE FORMATION
Abstract:
(EN) Various embodiments may provide a memory cell including a magnetic pinned layer with a substantially fixed magnetization direction, a crystalline spacer layer in contact with the magnetic pinned layer, and a magnetic storage layer. The magnetic storage layer may include an amorphous interface sub-layer in contact with the crystalline spacer layer, the amorphous interface sub-layer including a first alloy of iron (Fe) and at least one element. The amorphous storage layer may also include an amorphous enhancement sub-layer in contact with the amorphous interface sub-layer, the amorphous enhancement sub-layer including a second alloy of iron (Fe) and at least one element. The memory cell may additionally include a cap layer in contact with the amorphous enhancement sub-layer. A concentration of the at least one further element comprised in the first alloy and a concentration of the at least one further element comprised in the second alloy may be different.
(FR) L'invention concerne, dans divers modes de réalisation, une cellule de mémoire comprenant une couche magnétique ancrée avec une direction de magnétisation sensiblement fixe, une couche d'espacement cristalline en contact avec la couche magnétique ancrée et une couche de stockage magnétique. La couche de stockage magnétique peut contenir une sous-couche d'interface amorphe en contact avec la couche d'espacement cristalline, la sous-couche d'interface amorphe contenant un premier alliage de fer (Fe) et au moins un élément. La couche de stockage amorphe peut également contenir une sous-couche d'amélioration amorphe en contact avec la sous-couche d'interface amorphe, la sous-couche d'amélioration amorphe contenant un second alliage de fer (Fe) et au moins un élément. La cellule de mémoire peut contenir de plus une couche de recouvrement en contact avec la sous-couche d'amélioration amorphe. Une concentration du au moins un autre élément compris dans le premier alliage et une concentration du au moins un autre élément compris dans le second alliage peuvent être différentes.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
SG11201806324U