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1. (WO2017130897) SUBSTRATE TREATMENT DEVICE AND SUBSTRATE TREATMENT METHOD
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/130897 International Application No.: PCT/JP2017/002107
Publication Date: 03.08.2017 International Filing Date: 23.01.2017
IPC:
H01L 21/304 (2006.01) ,H01L 21/027 (2006.01) ,H01L 21/306 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304
Mechanical treatment, e.g. grinding, polishing, cutting
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
027
Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
Applicants:
株式会社SCREENホールディングス SCREEN HOLDINGS CO., LTD. [JP/JP]; 京都府京都市上京区堀川通寺之内上る4丁目天神北町1番地の1 1-1, Tenjinkita-machi, Teranouchi-agaru 4-chome, Horikawa-dori, Kamigyo-ku, Kyoto-shi, Kyoto 6028585, JP
Inventors:
橋詰 彰夫 HASHIZUME, Akio; JP
Agent:
稲岡 耕作 INAOKA, Kosaku; JP
川崎 実夫 KAWASAKI, Jitsuo; JP
Priority Data:
2016-01188525.01.2016JP
Title (EN) SUBSTRATE TREATMENT DEVICE AND SUBSTRATE TREATMENT METHOD
(FR) DISPOSITIF DE TRAITEMENT DE SUBSTRAT ET PROCÉDÉ DE TRAITEMENT DE SUBSTRAT
(JA) 基板処理装置および基板処理方法
Abstract:
(EN) This substrate treatment device includes: a substrate holding unit that holds a substrate; a rotation unit that rotates the substrate held by the substrate holding unit, about a prescribed first rotational axis passing through the center portion of a main surface of the substrate; a nozzle that is provided in an autorotatable manner about a prescribed second rotational axis, that ejects treatment fluid toward the main surface of the substrate, and that has a plurality of ejection ports disposed at positions apart from the second rotational axis; a nozzle arm that supports the nozzle; a nozzle autorotation unit that causes autorotation of the nozzle about the second rotational axis; a treatment fluid supplying unit that supplies the treatment fluid to the plurality of ejection ports; and a nozzle moving unit that moves the nozzle arm to move the nozzle between a center portion treatment position at which the treatment fluid ejected from the nozzle is supplied to the center portion of the main surface of the substrate and a peripheral edge portion treatment position at which the treatment fluid ejected from the nozzle is supplied to the peripheral edge portion of the main surface of the substrate.
(FR) le dispositif de traitement de substrat selon la présente invention comprend : une unité de maintien de substrat qui maintient un substrat ; une unité de rotation qui fait tourner le substrat maintenu par l'unité de maintien de substrat, autour d'un premier axe de rotation prescrit traversant la partie centrale d'une surface principale du substrat ; une buse qui est disposée d'une manière à auto-rotation autour d'un second axe de rotation prescrit, qui éjecte un fluide de traitement vers la surface principale du substrat, et qui présente une pluralité d'orifices d'éjection disposés à des positions espacées du second axe de rotation ; un bras de buse qui soutient la buse ; une unité à auto-rotation de buse qui provoque l'auto-rotation de la buse autour du second axe de rotation ; une unité d'alimentation en fluide de traitement qui fournit le fluide de traitement à la pluralité d'orifices d'éjection ; et une unité de déplacement de buse qui déplace le bras de buse pour déplacer la buse entre une position de traitement de partie centrale à laquelle le fluide de traitement éjecté par la buse est fourni à la partie centrale de la surface principale du substrat et une position de traitement de partie de bord périphérique à laquelle le fluide de traitement éjecté par la buse est fourni à la partie de bord périphérique de la surface principale du substrat.
(JA) 基板処理装置は、基板を保持する基板保持ユニットと、前記基板保持ユニットに保持されている基板を、当該基板の主面の中央部を通る所定の第1の回転軸線回りに基板を回転する回転ユニットと、所定の第2の回転軸線まわりに自転可能に設けられ、前記基板の主面に向けて処理流体を吐出するノズルであって、前記第2の回転軸線から離れた位置に配置された複数の吐出口を有するノズルと、前記ノズルを支持するノズルアームと、前記第2の回転軸線まわりに前記ノズルを自転させるノズル自転ユニットと、前記複数の吐出口に処理流体を供給する処理流体供給ユニットと、前記ノズルアームを移動させることにより、前記ノズルから吐出される処理流体が基板の主面の中央部に供給される中央部処理位置と、前記ノズルから吐出される処理流体が前記基板の主面の周縁部に供給される周縁部処理位置との間で、前記ノズルを移動させるノズル移動ユニットとを含む。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
CN108475630KR1020180087391US20180366350