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1. (WO2017130873) RESIST PATTERN FORMING METHOD
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/130873 International Application No.: PCT/JP2017/002032
Publication Date: 03.08.2017 International Filing Date: 20.01.2017
IPC:
G03F 7/039 (2006.01) ,C08F 212/14 (2006.01) ,C08F 222/18 (2006.01) ,G03F 7/20 (2006.01) ,G03F 7/32 (2006.01) ,H01L 21/027 (2006.01)
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
039
Macromolecular compounds which are photodegradable, e.g. positive electron resists
C CHEMISTRY; METALLURGY
08
ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
F
MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
212
Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
02
Monomers containing only one unsaturated aliphatic radical
04
containing one ring
14
substituted by hetero atoms or groups containing hetero atoms
C CHEMISTRY; METALLURGY
08
ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
F
MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
222
Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
10
Esters
12
of phenols or saturated alcohols
18
Esters containing halogen
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20
Exposure; Apparatus therefor
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26
Processing photosensitive materials; Apparatus therefor
30
Imagewise removal using liquid means
32
Liquid compositions therefor, e.g. developers
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
027
Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
Applicants:
日本ゼオン株式会社 ZEON CORPORATION [JP/JP]; 東京都千代田区丸の内一丁目6番2号 6-2, Marunouchi 1-chome, Chiyoda-ku Tokyo 1008246, JP
Inventors:
星野 学 HOSHINO Manabu; JP
Agent:
杉村 憲司 SUGIMURA Kenji; JP
Priority Data:
2016-01660029.01.2016JP
Title (EN) RESIST PATTERN FORMING METHOD
(FR) PROCÉDÉ DE FORMATION DE MOTIF DE RÉSINE PHOTOSENSIBLE
(JA) レジストパターン形成方法
Abstract:
(EN) The purpose of the present invention is to efficiently form a resist pattern using a resist composition that includes a polymer, said resist composition being able to suppress the occurrence of resist pattern collapse when used as a main-chain scission positive resist. This resist pattern forming method is characterized by including: a step in which a resist film is formed using a positive resist composition that includes a polymer, said polymer having a monomer unit (A) expressed by general formula (1) and a monomer unit (B) expressed by general formula (2), at least one of said monomer unit (A) and said monomer unit (B) having one or more fluorine atoms; an exposure step; and a development step, wherein the development is performed using a developing fluid with a surface tension that is greater than 17mN/m and less than or equal to 24mN/m.
(FR) L'objet de la présente invention est de former efficacement un motif de résine photosensible en utilisant une composition de résine photosensible qui comprend un polymère, ladite composition de résine photosensible pouvant éliminer l'apparition d'un affaissement de motif de résine photosensible lorsqu'elle est utilisée en tant que résine photosensible positive de scission de chaîne principale. Le procédé de formation de motif de résine photosensible de l'invention est caractérisé en ce qu'il comprend : une étape dans laquelle est formé un film de résine photosensible en utilisant une composition de résine photosensible positive qui comprend un polymère, ledit polymère comprenant un motif monomère (A) représenté par la formule générale (1) et un motif monomère (B) représenté par la formule générale (2), ledit motif monomère (A) et/ou ledit motif monomère (B) comportant un ou plusieurs atomes de fluor ; une étape d'exposition ; et une étape de développement, le développement étant effectué à l'aide d'un fluide de développement ayant une tension de surface qui est supérieure à 17 mN/m et inférieure ou égale à 24 mN/m.
(JA) 本発明は、主鎖切断型のポジ型レジストとして使用した際にレジストパターンの倒れの発生を抑制することができる重合体を含むレジスト組成物を用いて、レジストパターンを効率的に形成することを目的とする。本発明のレジストパターン形成方法は、下記の一般式(I)で表される単量体単位(A)および一般式(II)で表される単量体単位(B)を有し、単量体単位(A)および単量体単位(B)の少なくとも一方がフッ素原子を一つ以上有する重合体を含む、ポジ型レジスト組成物を用いてレジスト膜を形成する工程と、露光工程と、現像工程と、を含み、現像を、表面張力が17mN/m超24mN/m以下の現像液を用いて行うことを特徴とする。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)