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1. (WO2017130809) EPITAXIAL GROWTH DEVICE AND HOLDING MEMBER
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/130809 International Application No.: PCT/JP2017/001501
Publication Date: 03.08.2017 International Filing Date: 18.01.2017
IPC:
H01L 21/205 (2006.01) ,C23C 16/44 (2006.01) ,C23C 16/458 (2006.01) ,H01L 21/683 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205
using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
458
characterised by the method used for supporting substrates in the reaction chamber
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683
for supporting or gripping
Applicants:
信越半導体株式会社 SHIN-ETSU HANDOTAI CO.,LTD. [JP/JP]; 東京都千代田区大手町二丁目2番1号 2-1, Ohtemachi 2-chome, Chiyoda-ku, Tokyo 1000004, JP
Inventors:
小林 武史 KOBAYASHI, Takeshi; JP
Agent:
張川 隆司 HARIKAWA, Takashi; JP
Priority Data:
2016-01147225.01.2016JP
Title (EN) EPITAXIAL GROWTH DEVICE AND HOLDING MEMBER
(FR) DISPOSITIF DE CROISSANCE ÉPITAXIALE ET ÉLÉMENT DE MAINTIEN
(JA) エピタキシャル成長装置及び保持部材
Abstract:
(EN) A vapor-phase growth device 1 is equipped with a susceptor 3, a lift pin 5, and a support ring 6. The susceptor 3 is capable of rotating around an axis O, and has a through-hole 3b passing therethrough from the front to the rear thereof. The lift pin 5 is inserted into the through-hole 3b. The support ring 6 has a ring section 6a and a plate-shaped member 6b, and holds the lift pin 5 by sandwiching the lift pin 5 between the ring section 6a and the plate-shaped member 6b. The ring section 6a is positioned around the axis O. The plate-shaped member 6b includes a connecting part 6b1 for connecting to the ring section 6a, extends from the connecting part 6b1 along the ring section 6a, and biases toward the ring section 6a with the connecting part 6b1 as the pivot point. As a result, the present invention provides: an epitaxial growth device that has a holding member capable of maintaining the positional relationship with the lift pin and holding the lift pin; and a holding member therefor.
(FR) L'invention concerne un dispositif de croissance en phase vapeur 1 équipé d’un suscepteur 3, d’une tige de levage 5 et d’une bague de support 6. Le suscepteur 3 est capable de tourner autour d’un axe O et possède un trou de traversée 3b qui le traverse d’avant en arrière. La tige de levage 5 est insérée dans le trou de traversée 3b. La bague de support 6 présente une section annulaire 6a et un élément en forme de plaque 6b, et maintient la tige de levage 5 en enserrant la tige de levage 5 entre la section annulaire 6a et l’élément en forme de plaque 6b. La section annulaire 6a est positionnée autour de l’axe O. L’élément en forme de plaque 6b comprend une partie de raccordement 6b1 servant au raccordement avec la section annulaire 6a, s’étend depuis la partie de raccordement 6b1 le long de la section annulaire 6a, et s’incline vers la section annulaire 6a avec la partie de raccordement 6b1 comme point de pivot. La présente invention concerne par conséquent : un dispositif de croissance épitaxiale qui comprend un élément de maintien capable de maintenir la relation de position avec la tige de levage et de maintenir la tige de levage; et un élément de support associé.
(JA) 気相成長装置1は、サセプタ3と、リフトピン5と、サポートリング6を備える。サセプタ3は、表裏を貫通する貫通孔3bを有して軸線O回りに回転可能である。リフトピン5は、貫通孔3bに挿入される。サポートリング6は、リング部6aと板状部材6bを有してリング部6aと板状部材6bの間にリフトピン5を挟んで保持する。リング部6aは、軸線O回りに位置する。板状部材6bは、リング部6aに接続する接続部6b1を含み接続部6b1からリング部6aに沿って延びて接続部6b1を基点にリング部6aに向けて付勢する。これにより、リフトピンとの位置関係を維持してリフトピンを保持することが可能な保持部材を有するエピタキシャル成長装置及びその保持部材を提供する。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
CN108604539KR1020180107079