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1. (WO2017130682) SOLID-STATE IMAGE CAPTURE DEVICE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/130682 International Application No.: PCT/JP2017/000435
Publication Date: 03.08.2017 International Filing Date: 10.01.2017
IPC:
H01L 27/14 (2006.01) ,G02B 3/00 (2006.01) ,H04N 5/369 (2011.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14
including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
G PHYSICS
02
OPTICS
B
OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
3
Simple or compound lenses
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
N
PICTORIAL COMMUNICATION, e.g. TELEVISION
5
Details of television systems
30
Transforming light or analogous information into electric information
335
using solid-state image sensors [SSIS]
369
SSIS architecture; Circuitry associated therewith
Applicants:
パナソニック・タワージャズセミコンダクター株式会社 TOWERJAZZ PANASONIC SEMICONDUCTOR CO., LTD. [JP/JP]; 富山県魚津市東山800番地 800 Higashiyama, Uozu City, Toyama 9378585, JP
Inventors:
横山 敏史 YOKOYAMA Toshifumi; JP
西 嘉昭 NISHI Yoshiaki; JP
Agent:
特許業務法人前田特許事務所 MAEDA & PARTNERS; 大阪府大阪市北区堂島浜1丁目2番1号 新ダイビル23階 Shin-Daibiru Bldg. 23F, 2-1, Dojimahama 1-chome, Kita-ku, Osaka-shi, Osaka 5300004, JP
Priority Data:
2016-01520929.01.2016JP
Title (EN) SOLID-STATE IMAGE CAPTURE DEVICE
(FR) DISPOSITIF D’IMAGERIE À SEMI-CONDUCTEURS
(JA) 固体撮像装置
Abstract:
(EN) On a substrate (1) comprising a plurality of photodiodes (2) respectively formed as pixels on a major surface, a plurality of microlenses (14) for respectively guiding incident light to corresponding pixels are provided. Each of the plurality of microlenses (14) includes a first outer surface (21) positioned on an apex side, and a second outer surface (22) positioned on a proximal side. In order to suppress the generation of a flare, the first outer surface (21) and the major surface of the substrate (1) form an angle smaller than 20°, and the second outer surface (22) and the major surface of the substrate (1) form an angle greater than 40°.
(FR) Selon l’invention, une pluralité de microlentilles (14) destinée à guider chaque lumière incidente vers un pixel correspondant, est agencée sur un substrat (1) constitué par formation sur une face principale d’une pluralité de photodiodes servant de pixels. Chacune des microlentilles (14) possède une première face externe (21) positionnée côté sommet, et une seconde face externe (22) positionnée côté partie de base. Afin de supprimer la génération d’une lumière parasite, l’angle formé par la première face externe (21) et par la face principale du substrat (1), est inférieur à 20°, et l’angle formé par la seconde face externe (22) et la face principale du substrat (1), est supérieur à 40°.
(JA) 主面に各々画素として複数のフォトダイオード(2)が形成されてなる基板(1)の上に、各々入射光を対応する画素へ導くための複数のマイクロレンズ(14)を設ける。複数のマイクロレンズ(14)の各々は、頂点側に位置する第1の外面(21)と、基部側に位置する第2の外面(22)とを有する。フレアの発生を抑制するように、第1の外面(21)と基板(1)の主面とのなす角度は20°より小であり、かつ第2の外面(22)と基板(1)の主面とのなす角度は40°より大である。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)