Search International and National Patent Collections
Some content of this application is unavailable at the moment.
If this situation persists, please contact us atFeedback&Contact
1. (WO2017130629) RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST PATTERN FORMING METHOD
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/130629 International Application No.: PCT/JP2016/089010
Publication Date: 03.08.2017 International Filing Date: 27.12.2016
IPC:
G03F 7/004 (2006.01) ,G03F 7/038 (2006.01) ,G03F 7/039 (2006.01)
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
04
Chromates
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
038
Macromolecular compounds which are rendered insoluble or differentially wettable
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
039
Macromolecular compounds which are photodegradable, e.g. positive electron resists
Applicants:
JSR株式会社 JSR CORPORATION [JP/JP]; 東京都港区東新橋一丁目9番2号 9-2, Higashi-Shinbashi 1-chome, Minato-ku, Tokyo 1058640, JP
Inventors:
錦織 克聡 NISHIKORI Katsuaki; JP
生井 準人 NAMAI Hayato; JP
Agent:
天野 一規 AMANO Kazunori; JP
Priority Data:
2016-01194625.01.2016JP
Title (EN) RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST PATTERN FORMING METHOD
(FR) COMPOSITION DE RÉSINE SENSIBLE AU RAYONNEMENT ET PROCÉDÉ DE FORMATION DE MOTIF DE RÉSERVE
(JA) 感放射線性樹脂組成物及びレジストパターン形成方法
Abstract:
(EN) The present invention pertains to a radiation-sensitive resin composition containing: a first compound represented by formula (1); a first polymer having an acid- dissociable group; and a radiation-sensitive acid generator other than the first compound, wherein the radiation-sensitive acid generator includes an onium salt compound. In formula (1): n is 2 or 3; L is a single bond or n-valent organic group, in which the number of atoms included in a linking group having the smallest number bonds among linking groups connecting carboxylate groups is 0-10; n is 2 when L is a single bond; m is 1 or 2; m is 1 when n is 2; and Y+ is a monovalent radiation-sensitive onium cation.
(FR) La présente invention concerne une composition de résine sensible au rayonnement qui contient : un premier composé représenté par la formule (1) ; un premier polymère ayant un groupe dissociable par un acide ; et un générateur d'acide sensible au rayonnement autre que le premier composé, le générateur d'acide sensible au rayonnement comprenant un composé de sel d'onium. Dans la formule (1) : n est 2 ou 3 ; L est un groupe organique de valence n ou une liaison simple, où le nombre d'atomes compris dans un groupe de liaison ayant le plus petit nombre de liaisons entre des groupes de liaison reliant des groupes carboxylate est compris entre 0 et 10 ; n vaut 2 lorsque L est une liaison simple ; m vaut 1 ou 2 ; m vaut 1 lorsque n vaut 2 ; et Y+ est un cation onium monovalent sensible au rayonnement.
(JA) 本発明は、下記式(1)で表される第1化合物と、酸解離性基を有する第1重合体と、上記第1化合物以外の感放射線性酸発生体とを含有し、上記感放射線酸発生体がオニウム塩化合物を含む感放射線性樹脂組成物である。上記式(1)中、nは、2又は3である。Lは、単結合又はn価の有機基であって、複数あるカルボキシレート基同士を連結する連結基のうち結合数が最小となる連結基に含まれる原子数は、0~10である。但し、Lが単結合の時、nは2である。mは、1又は2である。但し、nが2の時、mは1である。Yは、1価の感放射線性オニウムカチオンである。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
KR1020180101409