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1. (WO2017128987) PEROVSKITE OPTOELECTRONIC DEVICE, PREPARATION METHOD THEREFOR AND PEROVSKITE MATERIAL
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/128987 International Application No.: PCT/CN2017/071351
Publication Date: 03.08.2017 International Filing Date: 17.01.2017
IPC:
H01L 51/42 (2006.01) ,H01L 51/46 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
42
specially adapted for sensing infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation; specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
42
specially adapted for sensing infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation; specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
46
Selection of materials
Applicants:
南京工业大学 NANJING TECH UNIVERSITY [CN/CN]; 中国江苏省南京市 鼓楼区新模范马路5号 No.5 XinMofan Road, Gulou District Nanjing, Jiangsu 210009, CN
Inventors:
王建浦 WANG, Jianpu; CN
王娜娜 WANG, Nana; CN
葛睿 GE, Rui; CN
黄维 HUANG, Wei; CN
Agent:
南京苏高专利商标事务所(普通合伙) NANJING SUGAO PATENT AND TRADEMARK FIRM (ORDINARY PARTNERSHIP); 中国江苏省南京 白下区中山东路198号龙台国际大厦1912室 Room 1912, Longtaiguoji Mansion No.198, East Zhongshan Street, Baixia District Nanjing, Jiangsu 210005, CN
Priority Data:
201610051400.426.01.2016CN
Title (EN) PEROVSKITE OPTOELECTRONIC DEVICE, PREPARATION METHOD THEREFOR AND PEROVSKITE MATERIAL
(FR) DISPOSITIF OPTOÉLECTRONIQUE PÉROVSKITE, SON PROCÉDÉ DE PRÉPARATION ET MATÉRIAU PÉROVSKITE
(ZH) 一种钙钛矿光电器件、制备方法及一种钙钛矿材料
Abstract:
(EN) A perovskite optoelectronic device, comprising: a substrate (1), an electrode layer and a functional layer, wherein the electrode layer is disposed on a surface of the substrate, the functional layer is disposed between the electrode layers; the functional layer at least comprises a perovskite layer, wherein the perovskite layer is a perovskite material having a structure of self-assembled multi-quantum wells; by means of adjusting the composition of the material, controllable adjustment of the widths of the multi-quantum wells and effective energy transfer between the multi-quantum wells are made possible; a laminating color may be ultraviolet light, visible light and near infrared light. Thus, the issue wherein a thin film made of an existing perovskite material is discontinuous and unstable can be effectively solved. The perovskite optoelectronic device is simple in process, low-cost and suitable for wide applications in large-scale, low-cost industrial production of flexible substrates and high-performance devices. Also disclosed is a perovskite material that can be used in photoluminescent, electroluminescent, photovoltaic and thin-film transistor devices.
(FR) L'invention concerne un dispositif optoélectronique pérovskite, comprenant : un substrat (1), des couches d'électrode et une couche fonctionnelle, la couche d'électrode étant disposée sur une surface du substrat, la couche fonctionnelle étant disposée entre les couches d'électrode ; la couche fonctionnelle comprend au moins une couche de pérovskite, la couche de pérovskite étant un matériau pérovskite ayant une structure de puits quantiques multiples auto-assemblés ; au moyen d'un réglage de la composition du matériau, un réglage réglable de la largeur des puits quantiques multiples et du transfert d'énergie effectif entre les puits quantiques multiples sont rendus possibles ; une couleur de lumière peut être une lumière ultraviolette, une lumière visible et une lumière infrarouge proche. Le problème de discontinuité et d'instabilité d'une couche mince d'un matériau pérovskite existant peut ainsi être efficacement résolu. Le dispositif optoélectronique pérovskite est simple à mettre en œuvre, peu coûteux et approprié pour une large application dans la fabrication industrielle à grande échelle et à bas coût de substrats souples et de dispositifs à hautes performances. L'invention concerne également un matériau pérovskite qui peut être utilisé dans des dispositifs photoluminescents, électroluminescents, photovoltaïques et des transistors à couches minces.
(ZH) 一种钙钛矿光电器件,包括衬底(1)、电极层和功能层,电极层设置于衬底表面,功能层设置在电极层之间,功能层至少包括钙钛矿层,其中,钙钛矿层为具有自组装多量子阱结构的钙钛矿材料,通过调整材料组分,可实现多量子阱宽度的可控调节及多量子阱之间有效的能量转移,发光颜色可以是紫外、可见光和近红外光,并且可有效解决现有钙钛矿材料薄膜不连续和稳定性差的问题。钙钛矿光电器件的工艺简单、成本低廉,适合广泛应用于大面积、低成本、柔性衬底和高性能器件的工业化生产。一种钙钛矿材料,可用于光致发光、电致发光、光伏及薄膜晶体管器件中。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)
Also published as:
KR1020180093991EP3392922US20190036030