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1. (WO2017112932) PATTERNING AND INVERTED DEPOSITION ENGINEERING FOR SOLUTION-PROCESSED ELECTRODES AND SEMICONDUCTING FILMS
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/112932 International Application No.: PCT/US2016/068523
Publication Date: 29.06.2017 International Filing Date: 23.12.2016
IPC:
H01L 27/28 (2006.01) ,H01L 51/40 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28
including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05
specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier
40
Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
Applicants:
UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INCORPORATED [US/US]; 223 Grinter Hall Gaineville, FL 32611, US
Inventors:
SO, Franky; US
LIU, Shuyi; US
HO, Szuheng; US
Agent:
TABIBI, Ardeshir; US
Priority Data:
62/387,39623.12.2015US
Title (EN) PATTERNING AND INVERTED DEPOSITION ENGINEERING FOR SOLUTION-PROCESSED ELECTRODES AND SEMICONDUCTING FILMS
(FR) MODÉLISATION ET INGÉNIERIE DE DÉPÔT INVERSÉ POUR ÉLECTRODES TRAITÉES EN SOLUTION ET FILMS SEMI-CONDUCTEURS
Abstract:
(EN) A method of producing a device is provided, the method comprising treating a first substrate having a hydrophobic surface such that at least a portion of the surface becomes hydrophilic, forming at least one material layer over the hydrophilic portion of the substrate surface, treating the first substrate such that the hydrophilic portion of the first substrate's surface becomes hydrophobic, removing the first substrate from the at least one conductive layer; and forming at least one additional layer over the at least one conductive layer.
(FR) La présente invention porte sur un procédé de production d'un dispositif, le procédé comprenant le traitement d'un premier substrat ayant une surface hydrophobe de telle sorte qu'au moins une partie de la surface devient hydrophile, la formation d'au moins une couche de matériau sur la partie hydrophile de la surface de substrat, le traitement du premier substrat de telle sorte que la partie hydrophile de la première surface de substrat devient hydrophobe, le retrait du premier substrat de ladite couche conductrice; et la formation d'au moins une couche supplémentaire sur ladite couche conductrice.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)