Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2017112821) TILTED PHOTODETECTOR CELL
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/112821 International Application No.: PCT/US2016/068135
Publication Date: 29.06.2017 International Filing Date: 21.12.2016
IPC:
H01L 31/18 (2006.01) ,H01L 31/105 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
in which radiation controls flow of current through the device, e.g. photoresistors
10
characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101
Devices sensitive to infra-red, visible or ultra-violet radiation
102
characterised by only one potential barrier or surface barrier
105
the potential barrier being of the PIN type
Applicants:
TEXAS INSTRUMENTS INCORPORATED [US/US]; P.O. Box 655474, Mail Station 3999 Dallas, TX 75265-5474, US
TEXAS INSTRUMENTS JAPAN LIMITED [JP/JP]; 24-1 Nishi-shinjuku 6-chome Shinjuku-ku, 160-8366, JP (JP)
Inventors:
KAWAHARA, Hideaki; US
EDWARDS, Henry, Litzmann; US
Agent:
DAVIS, Jr., Michael, A.; US
DAVIS, Michael, A.; US
Common
Representative:
TEXAS INSTRUMENTS INCORPORATED; P.O. Box 655474, Mail Station 3999 Dallas, TX 75265-5474, US
Priority Data:
14/979,07122.12.2015US
Title (EN) TILTED PHOTODETECTOR CELL
(FR) CELLULE DE PHOTODÉTECTEUR INCLINÉE
Abstract:
(EN) In described examples, a photodetector cell (100) includes a substrate (105) having a semiconductor surface layer (110), and a trench (115) in the semiconductor surface layer (110). The trench (115) has tilted sidewalls including a first tilted sidewall (115a) and a second tilted sidewall (115b). A pn junction, a PIN structure, or a phototransistor includes an active p-region and an active n-region (122) that forms a junction including a first junction along the first tilted sidewall (115a) to provide a first photodetector element (120a) and a second junction spaced apart from the first junction along the second tilted sidewall (115b) to provide a second photodetector element (120b). At least a p-type anode contact (110a) and at least an n-type cathode contact (122a, 122b) contacts the active p-region and active n-region (122) of the first photodetector element (120a) and second photodetector element (120b). The tilted sidewalls (115a, 115b) provide an outer exposed or optically transparent surface for passing incident light to the first and second photodetector elements (120a, 120b) for detection of incident light.
(FR) Dans des exemples de la présente invention, une cellule de photodétecteur (100) comprend un substrat (105) ayant une couche à surface semi-conductrice (110), et une tranchée (115) dans la couche à surface semi-conductrice (110). La tranchée (115) a des parois latérales inclinées comportant une première paroi latérale inclinée (115a) et une seconde paroi latérale inclinée (115b). Une jonction PN, une structure PIN ou un phototransistor comporte une région P active et une région N active (122) qui forme une jonction comportant une première jonction le long de la première paroi latérale inclinée (115a) pour fournir un premier élément photodétecteur (120a) et une seconde jonction écartée de la première jonction le long de la seconde paroi latérale inclinée (115b) pour fournir un second élément photodétecteur (120b). Au moins un contact d'anode de type P (110a) et au moins un contact de cathode de type N (122a, 122b) contacte la région active P et la région active N (122) du premier élément photodétecteur (120a) et du second élément photodétecteur (120b). Les parois latérales inclinées (115a, 1 15b) fournissent une surface externe exposée ou optiquement transparente pour laisser passer une lumière incidente vers les premier et second éléments photodétecteurs (120a, 120b) aux fins de détection de la lumière incidente.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
CN108352422