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1. (WO2017112747) MICROSTRUCTURE ENHANCED ABSORPTION PHOTOSENSITIVE DEVICES
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/112747 International Application No.: PCT/US2016/067977
Publication Date: 29.06.2017 International Filing Date: 21.12.2016
IPC:
H01L 31/02 (2006.01) ,H01L 31/028 (2006.01) ,H01L 31/0745 (2012.01) ,H01L 31/101 (2006.01) ,H01L 31/105 (2006.01) ,H01L 31/12 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
Details
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248
characterised by their semiconductor bodies
0256
characterised by the material
0264
Inorganic materials
028
including, apart from doping material or other impurities, only elements of the fourth group of the Periodic System
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04
adapted as conversion devices
06
characterised by at least one potential-jump barrier or surface barrier
072
the potential barriers being only of the PN heterojunction type
0745
comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
in which radiation controls flow of current through the device, e.g. photoresistors
10
characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101
Devices sensitive to infra-red, visible or ultra-violet radiation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
in which radiation controls flow of current through the device, e.g. photoresistors
10
characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101
Devices sensitive to infra-red, visible or ultra-violet radiation
102
characterised by only one potential barrier or surface barrier
105
the potential barrier being of the PIN type
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
12
structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
Applicants:
W&WSENS DEVICES, INC. [US/US]; 38 Third Street, Suite 307 Los Altos, CA 94022, US
Inventors:
WANG, Shih-yuan; US
WANG, Shih-ping; US
Agent:
KAVRUKOV, Ivan, S.; US
Priority Data:
62/270,57721.12.2015US
62/290,39102.02.2016US
62/304,90707.03.2016US
62/334,93411.05.2016US
62/338,26318.05.2016US
62/346,85007.06.2016US
62/359,34907.07.2016US
62/366,18825.07.2016US
62/368,10928.07.2016US
62/374,82813.08.2016US
62/376,86918.08.2016US
62/380,36427.08.2016US
62/383,39103.09.2016US
62/383,47904.09.2016US
62/394,22214.09.2016US
62/398,60723.09.2016US
62/401,12628.09.2016US
62/406,99912.10.2016US
62/414,67129.10.2016US
62/415,33931.10.2016US
Title (EN) MICROSTRUCTURE ENHANCED ABSORPTION PHOTOSENSITIVE DEVICES
(FR) DISPOSITIFS PHOTOSENSIBLES À ABSORPTION AMÉLIORÉE PAR MICROSTRUCTURE
Abstract:
(EN) Techniques for enhancing the quantum efficiency (QE) in photodiodes and avalanche photodiodes with the use of microstructures are described. The microstructures, such as holes, effectively increase the absorption of the photons. QE can be enhanced using heterojunction PIN structures which can result in less light absorbed in the P and/or N regions and more light absorbed in the I region. Various alloys of GeSi can be used for I and/or P regions. The microstructured holes can be funnel shaped, aperiodic, non-circular, textured and/or slanted which can further increase QE.
(FR) La présente invention concerne des techniques pour augmenter le rendement quantique (QE) dans des photodiodes et des photodiodes à avalanche au moyen de microstructures. Les microstructures, telles que des trous, augmentent efficacement l'absorption des photons. QE peut être amélioré au moyen de structures PIN à hétérojonction, ce qui peut conduire à moins de lumière absorbée dans les régions P et/ou N et plus de lumière absorbée dans la région I. Différents alliages de GeSi peuvent être utilisés pour les régions I et/ou P. Les trous microstructurés peuvent être en forme d'entonnoir, apériodiques, non circulaires, texturés et/ou inclinés, ce qui peut augmenter plus avant QE.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP3411906CN109155340