Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2017112490) LED SIDEWALL PROCESSING TO MITIGATE NON-RADIATIVE RECOMBINATION
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/112490 International Application No.: PCT/US2016/066700
Publication Date: 29.06.2017 International Filing Date: 14.12.2016
IPC:
H01L 33/00 (2010.01) ,H01L 33/02 (2010.01) ,H01L 33/14 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
14
with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
Applicants:
APPLE INC. [US/US]; One Apple Park Way Cupertino, CA 95014, US
Inventors:
BOUR, David P.; US
SIZOV, Dimitry S.; US
HAEGER, Daniel A.; US
XIN, Xiaobin; US
Agent:
AIKIN, Jacob, T.; US
Priority Data:
62/271,18922.12.2015US
Title (EN) LED SIDEWALL PROCESSING TO MITIGATE NON-RADIATIVE RECOMBINATION
(FR) TRAITEMENT DE PAROIS LATÉRALES DE DEL POUR ATTÉNUER UNE RECOMBINAISON NON RADIATIVE
Abstract:
(EN) LEDs and methods of forming LEDs with various structural configurations to mitigate non-radiative recombination at the LED sidewalls are described. The various configurations described include combinations of LED sidewall surface diffusion with pillar structure, modulated doping profiles to form an n-p superlattice along the LED sidewalls, and selectively etched cladding layers to create entry points for shallow doping or regrowth layers.
(FR) La présente invention concerne des DEL et des procédés de formation de DEL avec diverses configurations de structure pour atténuer une recombinaison non radiative au niveau des parois latérales des DEL. Les diverses configurations selon l'invention comprennent des combinaisons de diffusion de surface de paroi latérale de DEL avec une structure de pilier, des profils de dopage modulé pour former un super-réseau N-P le long des parois latérales des DEL, et des couches de placage gravées sélectivement pour créer des points d'entrée pour des couches peu profondes de dopage ou de recroissance.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP3357096KR1020180074726CN108369974JP2018533847US20180374991