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1. (WO2017111829) THIN FILM SWITCHING DEVICE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/111829 International Application No.: PCT/US2015/000387
Publication Date: 29.06.2017 International Filing Date: 26.12.2015
IPC:
H01L 29/78 (2006.01) ,H01L 21/336 (2006.01) ,H01L 27/02 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334
Multistep processes for the manufacture of devices of the unipolar type
335
Field-effect transistors
336
with an insulated gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
Applicants:
INTEL CORPORATION [US/US]; 2200 Mission College Boulevard Santa Clara, CA 95054-1549, US
KARPOV, Elijah, V. [US/US]; US (US)
MAJHI, Prashant [IN/US]; US (US)
DOYLE, Brian, S. [IE/US]; US (US)
PILLARISETTY, Ravi [US/US]; US (US)
Inventors:
KARPOV, Elijah, V.; US
MAJHI, Prashant; US
DOYLE, Brian, S.; US
PILLARISETTY, Ravi; US
Agent:
PEMBERTON, John, D.; US
Priority Data:
Title (EN) THIN FILM SWITCHING DEVICE
(FR) DISPOSITIF DE COMMUTATION À FILM MINCE
Abstract:
(EN) Substrates, assemblies, and techniques for enabling a thin film switching device are disclosed herein. For example, in some embodiments, an apparatus can include a source, a drain, a transition material located between the source and the drain, and a dielectric layer. The dielectric layer can create stress on the transition material in response to an applied voltage, and the transition material can undergo a change in conductivity in response to the stress.
(FR) L'invention concerne des substrats, des ensembles et des techniques qui permettent de mettre en oeuvre un dispositif de commutation à film mince. Par exemple, dans certains modes de réalisation, un appareil peut comprendre une source, un drain, un matériau de transition placé entre la source et le drain, et une couche diélectrique. La couche diélectrique peut créer une contrainte sur le matériau de transition en réponse à une tension appliquée, et le matériau de transition peut subir un changement de conductivité en réponse à la contrainte.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)