Search International and National Patent Collections
Some content of this application is unavailable at the moment.
If this situation persists, please contact us atFeedback&Contact
1. (WO2017111827) NANOWIRE LED PIXEL
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/111827 International Application No.: PCT/US2015/000385
Publication Date: 29.06.2017 International Filing Date: 26.12.2015
IPC:
H01L 33/02 (2010.01) ,H01L 33/12 (2010.01) ,H01L 33/32 (2010.01) ,H05B 37/00 (2006.01) ,H05B 33/14 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
12
with a stress relaxation structure, e.g. buffer layer
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
26
Materials of the light emitting region
30
containing only elements of group III and group V of the periodic system
32
containing nitrogen
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
B
ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
37
Circuit arrangements for electric light sources in general
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
B
ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
33
Electroluminescent light sources
12
Light sources with substantially two-dimensional radiating surfaces
14
characterised by the chemical or physical composition or the arrangement of the electroluminescent material
Applicants:
INTEL CORPORATION [US/US]; 2200 Mission College Boulevard Santa Clara, CA 95054-1549, US
AHMED, Khaled [US/US]; US (US)
MAJHI, Prashant [US/US]; US (US)
Inventors:
AHMED, Khaled; US
MAJHI, Prashant; US
Agent:
PEMBERTON, John, D.; US
Priority Data:
Title (EN) NANOWIRE LED PIXEL
(FR) PIXEL DE DEL À NANOFILS
Abstract:
(EN) Substrates, assemblies, and techniques for enabling a nanowire LED pixel are disclosed herein. For example, some embodiments include growing a buffer layer on a support substrate, growing an N-type GaN layer on the buffer layer, growing a core of N-type GaN rods from the N-type GaN layer, growing an active emitting region (AER) around a portion of the N-type GaN core nanorods to create a blue AER LED, growing a AER around a portion of the N-type GaN core nanorods to create a green AER LED, and growing a AER around a portion of the N-type GaN core nanorods to create a red AER LED. This allows for the fabrication of RGB pixels on wafers monolithically (i.e., on a single wafer). The RGB pixels may then be transferred all at once, from source wafers to TFT backplanes.
(FR) L'invention concerne des substrats, des ensembles et des techniques d'activation d'un pixel de DEL à nanofils. Par exemple, certains modes de réalisation comprennent la croissance d'une couche tampon sur un substrat de support, la croissance d'une couche de GaN de type N sur la couche tampon, la croissance d'un noyau de tiges de GaN de type N à partir de la couche de GaN de type N, la croissance d'une zone active d'émission (AER) autour d'une partie des nanotiges du noyau de GaN de type N afin de créer une DEL AER bleue, la croissance d'une AER autour d'une partie des nanotiges du noyau de GaN de type N afin de créer une DEL AER verte, et la croissance d'une AER autour d'une partie des nanotiges du noyau de GaN de type N afin de créer une DEL AER rouge. Il est ainsi possible de fabriquer des pixels RVB sur des plaquettes de manière monolithique (c'est-à-dire sur une seule plaquette). Les pixels RVB peuvent alors être tous transférés en une seule fois, à partir de plaquettes source vers des panneaux arrière de TFT.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)