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1. (WO2017111813) HIGH RETENTION RESISTIVE RANDOM ACCESS MEMORY
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/111813 International Application No.: PCT/US2015/000369
Publication Date: 29.06.2017 International Filing Date: 26.12.2015
IPC:
H01L 45/00 (2006.01) ,H01L 45/02 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45
Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45
Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
02
Solid state travelling-wave devices
Applicants:
INTEL CORPORATION [US/US]; 2200 Mission College Boulevard Santa Clara, California 95054, US
Inventors:
PILLARISETTY, Ravi; US
MAJHI, Prashant; US
SHAH, Uday; US
MUKHERJEE, Niloy; US
KARPOV, Elijah V.; US
Agent:
RICHARDS, II, E.E. Jack; US
Priority Data:
Title (EN) HIGH RETENTION RESISTIVE RANDOM ACCESS MEMORY
(FR) MÉMOIRE VIVE RÉSISTIVE À RÉTENTION ÉLEVÉE
Abstract:
(EN) An embodiment includes a resistive random access memory (RRAM) comprising: top and bottom electrodes; first and second oxygen exchange layers (OELs) between the top and bottom electrodes; an oxide layer between the first and second OELs; wherein (a) first oxygen vacancies are within an upper third of the oxide layer at a first concentration, (b) second oxygen vacancies are within a lower third of the oxide layer at a second concentration, and (c) third oxygen vacancies are within a middle third of the oxide layer at a third concentration that is less than either of the first and second concentrations. Other embodiments are described herein.
(FR) L'invention concerne, selon un mode de réalisation, une mémoire vive résistive (RRAM) comprenant : des électrodes supérieure et inférieure ; des première et seconde couches d'échange d'oxygène (OEL) entre les électrodes supérieure et inférieure ; une couche d'oxyde entre les première et seconde OEL ; (a) des premières lacunes d'oxygène se trouvant dans un tiers supérieur de la couche d'oxyde à une première concentration, (b) des deuxièmes lacunes d'oxygène se trouvant dans un tiers inférieur de la couche d'oxyde à une deuxième concentration, et (c) des troisièmes lacunes d'oxygène se trouvant dans un tiers central de la couche d'oxyde à une troisième concentration qui est inférieure à la première ou à la deuxième concentration. L'invention concerne également d'autres modes de réalisation.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
US20180331288