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1. (WO2017111769) MICROELECTRONIC DEVICES DESIGNED WITH COMPOUND SEMICONDUCTOR DEVICES AND INTEGRATED ON AN INTER DIE FABRIC
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/111769 International Application No.: PCT/US2015/000160
Publication Date: 29.06.2017 International Filing Date: 22.12.2015
IPC:
H01L 23/66 (2006.01) ,H01L 23/48 (2006.01) ,H01L 25/065 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
58
Structural electrical arrangements for semiconductor devices not otherwise provided for
64
Impedance arrangements
66
High-frequency adaptations
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
48
Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03
all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04
the devices not having separate containers
065
the devices being of a type provided for in group H01L27/78
Applicants:
INTEL CORPORATION [US/US]; 2200 Mission College Boulevard Santa Clara, CA 95052, US
Inventors:
KAMGAING, Telesphor; US
DOGIAMIS, Georgios, C.; US
NAIR, Vijay, K.; US
FALCON, Javier, A.; US
LIFF, Shawna, M.; US
TOMITA, Yoshihiro; JP
Agent:
BRASK, Justin, K.; US
Priority Data:
Title (EN) MICROELECTRONIC DEVICES DESIGNED WITH COMPOUND SEMICONDUCTOR DEVICES AND INTEGRATED ON AN INTER DIE FABRIC
(FR) DISPOSITIFS MICROÉLECTRONIQUES CONÇUS AVEC DES DISPOSITIFS À SEMI-CONDUCTEUR COMPOSÉ ET INTÉGRÉS SUR UNE MATRICE DE COMMUTATION INTER-PUCES
Abstract:
(EN) Embodiments of the invention include a microelectronic device that includes a first silicon based substrate having compound semiconductor components. The microelectronic device also includes a second substrate coupled to the first substrate. The second substrate includes an antenna unit for transmitting and receiving communications at a frequency of approximately 4 GHz or higher.
(FR) Selon des modes de réalisation, l'invention concerne un dispositif microélectronique qui comprend un premier substrat à base de silicium portant des composants à semi-conducteur composé. Le dispositif microélectronique comprend également un second substrat couplé au premier substrat. Le second substrat comprend une unité d'antenne pour émettre et recevoir des communications à une fréquence d'environ 4 GHz ou plus.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
CN108292651US20180240762