Some content of this application is unavailable at the moment.
If this situation persists, please contact us atFeedback&Contact
1. (WO2017111546) BROADBAND HIGH-REFRACTIVE INDEX METAMATERIAL NANO-COMPOSITE STRUCTURE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/111546 International Application No.: PCT/KR2016/015205
Publication Date: 29.06.2017 International Filing Date: 23.12.2016
IPC:
H01L 21/027 (2006.01) ,B82B 1/00 (2006.01) ,H01L 21/02 (2006.01) ,H01L 29/06 (2006.01) ,B82Y 20/00 (2011.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
027
Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
B PERFORMING OPERATIONS; TRANSPORTING
82
NANO-TECHNOLOGY
B
NANO-STRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
1
Nano-structures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02
Semiconductor bodies
06
characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
B PERFORMING OPERATIONS; TRANSPORTING
82
NANO-TECHNOLOGY
Y
SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE  OR TREATMENT OF NANO-STRUCTURES
20
Nano-optics, e.g. quantum optics or photonic crystals
Applicants:
한국과학기술원 KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY [KR/KR]; 대전시 유성구 대학로 291 (구성동) (Guseong-dong), 291, Daehak-ro, Yuseong-gu Daejeon 34141, KR
고려대학교 산학협력단 KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION [KR/KR]; 서울시 성북구 안암로 145, 고려대학교 (안암동5가) (Anam-dong 5-ga), Korea University, 145, Anam-ro, Seongbuk-gu Seoul 02841, KR
Inventors:
신종화 SHIN, Jonghwa; KR
심현자 SHIM, Hyunja; KR
이헌 LEE, Heon; KR
정경재 CHUNG, Kyungjae; KR
김리향 KIM, Reehyang; KR
Agent:
특허법인 엠에이피에스 MAPS INTELLECTUAL PROPERTY LAW FIRM; 서울특별시 강남구 테헤란로8길 37, 8층 (역삼동, 한동빌딩) (Yeoksam-dong, Handong Bldg.), 8F 37, Teheran-ro 8-gil Gangnam-gu Seoul 06239, KR
Priority Data:
10-2015-018528123.12.2015KR
Title (EN) BROADBAND HIGH-REFRACTIVE INDEX METAMATERIAL NANO-COMPOSITE STRUCTURE
(FR) STRUCTURE NANOCOMPOSITE DE MÉTAMATÉRIAU À INDICE DE RÉFRACTION ÉLEVÉ À BANDE LARGE
(KO) 광대역 특성을 갖는 고굴절률 메타물질 나노 복합구조체
Abstract:
(EN) The present invention relates to a metamaterial nano-composite structure comprising a plurality of unit structures densely arrayed in three dimensions, each comprising a nanoparticle and a host material, and an optical film comprising the metamaterial nano-composite structure.
(FR) La présente invention concerne une structure nanocomposite de métamatériau comprenant une pluralité de structures unitaires disposées en réseau de manière dense en trois dimensions, chacune comprenant une nanoparticule et un matériau hôte, et un film optique comportant la structure nanocomposite de métamatériau.
(KO) 나노입자 및 호스트 물질을 포함하는 단위 구조체들을 포함하며, 상기 단위 구조체는 3 차원으로 조밀하게 배열되어 있는 것인, 메타물질 나노 복합구조체 및 상기 메타물질 나노 복합구조체를 포함하는 광학용 필름에 관한 것이다.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)