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1. (WO2017111537) THE MANUFACTURING METHOD OF TRANSISTOR FOR RADIATION MEASURING SENSOR
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/111537 International Application No.: PCT/KR2016/015181
Publication Date: 29.06.2017 International Filing Date: 23.12.2016
IPC:
G01T 1/24 (2006.01) ,H01L 29/772 (2006.01) ,H01L 29/423 (2006.01) ,H01L 21/02 (2006.01)
G PHYSICS
01
MEASURING; TESTING
T
MEASUREMENT OF NUCLEAR OR X-RADIATION
1
Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
16
Measuring radiation intensity
24
with semiconductor detectors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40
Electrodes
41
characterised by their shape, relative sizes or dispositions
423
not carrying the current to be rectified, amplified or switched
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
Applicants:
KOREA ASTRONOMY AND SPACE SCIENCE INSTITUTE [KR/KR]; (Hwaam-dong) 776, Daedeok-daero Yuseong-gu Daejeon 34055, KR
Inventors:
LEE, Dae Hee; KR
NAM, Uk Won; KR
LEE, Jae Jin; KR
KIM, Sung Hwan; KR
LEE, Wan Gyu; KR
Agent:
CHANG & HAN PATENT & LAW FIRM; (14th FL., Seocho G-well Tower, Seocho-dong) 356, Seocho-daero Seocho-gu Seoul 06631, KR
Priority Data:
10-2015-018639224.12.2015KR
Title (EN) THE MANUFACTURING METHOD OF TRANSISTOR FOR RADIATION MEASURING SENSOR
(FR) PROCÉDÉ DE FABRICATION DE TRANSISTOR POUR CAPTEUR DE MESURE DE RAYONNEMENT
Abstract:
(EN) The present invention relates to a method of manufacturing a transistor for a radiation measuring sensor, the method comprising steps of forming a gate area in which a gate electrode will be formed on a substrate, determining thickness of a gate insulating film to be formed in the gate area, adjusting a substrate concentration of the substrate in accordance with the determined thickness of the gate insulating film, forming the gate insulating film in the gate area by determined thickness of the gate insulating film, forming a source and a drain in accordance with the thickness of the gate insulating film, and forming the gate electrode by adjusting length and width of the gate electrode in accordance with the thickness of the gate insulating film.
(FR) La présente invention concerne un procédé de fabrication d'un transistor pour un capteur de mesure de rayonnement, le procédé comprenant les étapes de : la formation d'une zone de grille dans laquelle une électrode de grille est formée sur un substrat ; la détermination de l'épaisseur d'un film d'isolation de grille à former dans la zone de grille ; le réglage d'une concentration de substrat du substrat en fonction de l'épaisseur déterminée du film d'isolation de grille ; la formation du film d'isolation de grille dans la zone de grille par l'épaisseur déterminée du film d'isolation de grille ; la formation d'une source et d'un drain en fonction de l'épaisseur du film d'isolation de grille ; et la formation de l'électrode de grille par réglage de la longueur et de la largeur de l'électrode de grille en fonction de l'épaisseur du film d'isolation de grille.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)