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1. (WO2017111275) THIN FILM TRANSISTOR SUBSTRATE, AND DISPLAY PANEL AND DISPLAY DEVICE INCLUDING SAME
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/111275 International Application No.: PCT/KR2016/011573
Publication Date: 29.06.2017 International Filing Date: 14.10.2016
IPC:
H01L 29/786 (2006.01) ,H01L 27/32 (2006.01) ,G02F 1/1333 (2006.01) ,G02F 1/1335 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28
including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
32
with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
G PHYSICS
02
OPTICS
F
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1
Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01
for the control of the intensity, phase, polarisation or colour
13
based on liquid crystals, e.g. single liquid crystal display cells
133
Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
1333
Constructional arrangements
G PHYSICS
02
OPTICS
F
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1
Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01
for the control of the intensity, phase, polarisation or colour
13
based on liquid crystals, e.g. single liquid crystal display cells
133
Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
1333
Constructional arrangements
1335
Structural association of optical devices, e.g. polarisers, reflectors, with the cell
Applicants:
엘지이노텍 주식회사 LG INNOTEK CO., LTD. [KR/KR]; 서울시 중구 후암로 98 98, Huam-ro, Jung-gu Seoul 04637, KR
Inventors:
이상열 LEE, Sang Youl; KR
김청송 KIM, Chung Song; KR
문지형 MOON, Ji Hyung; KR
박선우 PARK, Sun Woo; KR
송준오 SONG, June O; KR
Agent:
김기문 KIM, Ki Moon; KR
Priority Data:
10-2015-018411222.12.2015KR
Title (EN) THIN FILM TRANSISTOR SUBSTRATE, AND DISPLAY PANEL AND DISPLAY DEVICE INCLUDING SAME
(FR) SUBSTRAT DE TRANSISTOR À COUCHES MINCES, ET PANNEAU D'AFFICHAGE ET DISPOSITIF D'AFFICHAGE COMPRENANT CELUI-CI
(KO) 박막 트랜지스터 기판, 이를 포함하는 표시패널 및 표시장치
Abstract:
(EN) A thin film transistor substrate according to an embodiment comprises: a support substrate; a bonding layer disposed on the support substrate; a thin film transistor disposed on the bonding layer, wherein the thin film includes a channel layer containing a nitride-based semiconductor layer, a source electrode electrically connected to a first region of the channel layer, a drain electrode electrically connected to a second region of the channel layer, a gate electrode disposed below the channel layer, and a depletion forming layer disposed between the channel layer and the gate electrode; and a pixel electrode disposed on the thin film transistor and electrically connected to the drain electrode of the thin film transistor. The thin film transistor substrate according to the embodiment, and a display panel and a display device including the same have an advantage of implementing high resolution and reproducing a soft moving image by providing high carrier mobility.
(FR) Selon un mode de réalisation, un substrat de transistor à couches minces comprend : un substrat de support; une couche de liaison disposée sur le substrat de support; un transistor à couches minces disposé sur la couche de liaison, ladite couche mince comprenant une couche de canal contenant une couche semi-conductrice à base de nitrure, une électrode de source connectée électriquement à une première région de la couche de canal, une électrode de drain connectée électriquement à une seconde région de la couche de canal, une électrode de grille disposée sous la couche de canal, et une couche de formation d'appauvrissement disposée entre la couche de canal et l'électrode de grille; et une électrode de pixel disposée sur le transistor à couches minces et connectée électriquement à l'électrode de drain du transistor à couches minces. Le substrat de transistor à couches minces selon ledit mode de réalisation, et un panneau d'affichage et un dispositif d'affichage comprenant celui-ci, ont l'avantage de mettre en œuvre une résolution élevée et de reproduire une image d'un mouvement lent en fournissant une mobilité des porteurs élevée.
(KO) 실시 예에 따른 박막 트랜지스터 기판은, 지지기판; 지지기판 위에 배치된 본딩층; 본딩층 위에 배치되며, 질화물계 반도체층을 포함하는 채널층, 채널층의 제1 영역에 전기적으로 연결된 소스 전극, 채널층의 제2 영역에 전기적으로 연결된 드레인 전극, 채널층 아래에 배치된 게이트 전극, 채널층과 게이트 전극 사이에 배치된 디플리션 형성층을 포함하는 박막 트랜지스터; 박막 트랜지스터 위에 배치되며 박막 트랜지스터의 드레인 전극에 전기적으로 연결된 화소전극; 을 포함할 수 있다. 실시 예에 따른 박막 트랜지스터 기판, 이를 포함하는 표시패널 및 표시장치는, 높은 캐리어 이동도를 제공함으로써 고해상도를 구현하고 부드러운 동화상을 재생할 수 있는 장점이 있다.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)
Also published as:
US20180374876