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1. (WO2017111090) PIEZOELECTRIC THIN FILM, PIEZOELECTRIC THIN FILM ELEMENT, PIEZOELECTRIC ACTUATOR, PIEZOELECTRIC SENSOR, HEAD ASSEMBLY, HEAD STACK ASSEMBLY, HARD DISK DRIVE, PRINTER HEAD, AND INKJET PRINTER DEVICE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/111090 International Application No.: PCT/JP2016/088501
Publication Date: 29.06.2017 International Filing Date: 22.12.2016
IPC:
C30B 29/32 (2006.01) ,B41J 2/14 (2006.01) ,C04B 35/475 (2006.01) ,C23C 14/08 (2006.01) ,C23C 14/24 (2006.01) ,C23C 14/28 (2006.01) ,G11B 5/596 (2006.01) ,G11B 21/10 (2006.01) ,G11B 21/21 (2006.01) ,H01L 41/09 (2006.01) ,H01L 41/113 (2006.01) ,H01L 41/187 (2006.01) ,H02N 2/02 (2006.01) ,H02N 2/18 (2006.01)
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10
Inorganic compounds or compositions
16
Oxides
22
Complex oxides
32
Titanates; Germanates; Molybdates; Tungstates
B PERFORMING OPERATIONS; TRANSPORTING
41
PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
J
TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
2
Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
005
characterised by bringing liquid or particles selectively into contact with a printing material
01
Ink jet
135
Nozzles
14
Structure thereof
C CHEMISTRY; METALLURGY
04
CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
B
LIME; MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
35
Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
01
based on oxides
46
based on titanium oxides or titanates
462
based on titanates
475
based on bismuth titanates
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06
characterised by the coating material
08
Oxides
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22
characterised by the process of coating
24
Vacuum evaporation
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22
characterised by the process of coating
24
Vacuum evaporation
28
by wave energy or particle radiation
G PHYSICS
11
INFORMATION STORAGE
B
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
5
Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
48
Disposition or mounting of heads relative to record carriers
58
with provision for moving the head for the purpose of maintaining alignment of the head relative to the record carrier during transducing operation, e.g. to compensate for surface irregularities of the latter or for track following
596
for track following on discs
G PHYSICS
11
INFORMATION STORAGE
B
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
21
Head arrangements not specific to the method of recording or reproducing
02
Driving or moving of heads
10
Track finding or aligning by moving the head
G PHYSICS
11
INFORMATION STORAGE
B
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
21
Head arrangements not specific to the method of recording or reproducing
16
Supporting the heads; Supporting the sockets for plug-in heads
20
while the head is in operative position but stationary or permitting minor movements to follow irregularities in surface of record carrier
21
with provision for maintaining desired spacing of head from record carrier, e.g. fluid-dynamic spacing, slider
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41
Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
Piezo-electric or electrostrictive elements
09
with electrical input and mechanical output
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41
Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
Piezo-electric or electrostrictive elements
113
with mechanical input and electrical output
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41
Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
16
Selection of materials
18
for piezo-electric or electrostrictive elements
187
Ceramic compositions
H ELECTRICITY
02
GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
N
ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
2
Electric machines in general using piezo-electric effect, electrostriction or magnetostriction
02
producing linear motion, e.g. actuators; Linear positioners
H ELECTRICITY
02
GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
N
ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
2
Electric machines in general using piezo-electric effect, electrostriction or magnetostriction
18
producing electrical output from mechanical input, e.g. generators
Applicants:
TDK株式会社 TDK CORPORATION [JP/JP]; 東京都港区芝浦三丁目9番1号 3-9-1, Shibaura, Minato-ku, Tokyo 1080023, JP
国立大学法人東京工業大学 TOKYO INSTITUTE OF TECHNOLOGY [JP/JP]; 東京都目黒区大岡山2丁目12番1号 2-12-1, Ookayama, Meguro-ku, Tokyo 1528550, JP
Inventors:
政井 琢 MASAI Taku; JP
佐藤 祐介 SATO Yusuke; JP
森下 純平 MORISHITA Junpei; JP
舟窪 浩 FUNAKUBO Hiroshi; JP
清水 荘雄 SHIMIZU Takao; JP
根本 祐一 NEMOTO Yuichi; JP
Agent:
長谷川 芳樹 HASEGAWA Yoshiki; JP
黒木 義樹 KUROKI Yoshiki; JP
三上 敬史 MIKAMI Takafumi; JP
Priority Data:
2015-25482025.12.2015JP
Title (EN) PIEZOELECTRIC THIN FILM, PIEZOELECTRIC THIN FILM ELEMENT, PIEZOELECTRIC ACTUATOR, PIEZOELECTRIC SENSOR, HEAD ASSEMBLY, HEAD STACK ASSEMBLY, HARD DISK DRIVE, PRINTER HEAD, AND INKJET PRINTER DEVICE
(FR) FILM MINCE PIÉZOÉLECTRIQUE, ÉLÉMENT DE FILM MINCE PIÉZOÉLECTRIQUE, ACTIONNEUR PIÉZOÉLECTRIQUE, CAPTEUR PIÉZOÉLECTRIQUE, ENSEMBLE DE TÊTE, ENSEMBLE DE PILE DE TÊTE, LECTEUR DE DISQUE DUR, TÊTE D'IMPRIMANTE ET DISPOSITIF D'IMPRIMANTE À JET D'ENCRE
(JA) 圧電薄膜、圧電薄膜素子、圧電アクチュエータ、圧電センサ、ヘッドアセンブリ、ヘッドスタックアセンブリ、ハードディスクドライブ、プリンタヘッド、及びインクジェットプリンタ装置
Abstract:
(EN) Provided is a piezoelectric thin film having a large d31 and g31. A piezoelectric thin film 3 is superposed on a single-crystal substrate 1. The piezoelectric thin film 3 includes a crystalline oxide represented by chemical formula 1. One plane orientation of the oxide selected from the group consisting of (100), (001), (110), (101), and (111) is preferentially oriented in the normal direction DN of the single-crystal substrate 1. (1): (BixKy)TiO3 [In chemical formula 1, 0.30 ≤ x ≤ 0.60, 0.30 ≤ y ≤ 0.60, and 0.60 ≤ x + y ≤ 1.10.]
(FR) L'invention concerne un film mince piézoélectrique présentant un d31 et un g31 importants. Un film 3 mince piézoélectrique est superposé sur un substrat monocristallin 1. Le film 3 mince piézoélectrique comprend un oxyde cristallin représenté par la formule chimique 1. Une orientation de plan de l'oxyde sélectionnée dans le groupe constitué par (100), (001), (110), (101) et (111) est de préférence orientée dans la direction normale DN du substrat monocristallin 1. (1): (BixKy)TiO3 [Dans la formule chimique 1, 0,30 ≤ x ≤ 0,60, 0,30 ≤ y ≤ 0,60 et 0,60 ≤ x + y ≤ 1,10.]
(JA) 31及びg31が大きい圧電薄膜が提供される。圧電薄膜3は、単結晶基板1に重なる。圧電薄膜3は、下記化学式1で表される結晶質の酸化物を含む。(100)、(001)、(110)、(101)及び(111)からなる群より選ばれる酸化物の面方位の一つが、単結晶基板1の法線方向Dにおいて優先的に配向している。 (Bi)TiO (1) [上記化学式1中、0.30≦x≦0.60, 0.30≦y≦0.60, 0.60≦x+y≦1.10。]
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)