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1. (WO2017110966) CRUCIBLE MANAGING SYSTEM, CRUCIBLE MANAGING METHOD, METHOD FOR MANUFACTURING SILICA GLASS CRUCIBLE, METHOD FOR MANUFACTURING SILICON INGOT, AND METHOD FOR MANUFACTURING HOMOEPITAXIAL WAFER
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/110966 International Application No.: PCT/JP2016/088284
Publication Date: 29.06.2017 International Filing Date: 22.12.2016
IPC:
C30B 29/06 (2006.01) ,C30B 15/10 (2006.01) ,G01B 11/16 (2006.01) ,G01B 11/24 (2006.01)
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02
Elements
06
Silicon
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
15
Single-crystal growth by pulling from a melt, e.g. Czochralski method
10
Crucibles or containers for supporting the melt
G PHYSICS
01
MEASURING; TESTING
B
MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
11
Measuring arrangements characterised by the use of optical means
16
for measuring the deformation in a solid, e.g. optical strain gauge
G PHYSICS
01
MEASURING; TESTING
B
MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
11
Measuring arrangements characterised by the use of optical means
24
for measuring contours or curvatures
Applicants:
株式会社SUMCO SUMCO CORPORATION [JP/JP]; 東京都港区芝浦一丁目2番1号 2-1, Shibaura 1-chome, Minato-ku Tokyo 1058634, JP
Inventors:
須藤 俊明 SUDO Toshiaki; JP
佐藤 忠広 SATO Tadahiro; JP
北原 賢 KITAHARA Ken; JP
北原 江梨子 KITAHARA Eriko; JP
Agent:
野村 一郎 NOMURA Ichiro; JP
Priority Data:
2015-25465025.12.2015JP
Title (EN) CRUCIBLE MANAGING SYSTEM, CRUCIBLE MANAGING METHOD, METHOD FOR MANUFACTURING SILICA GLASS CRUCIBLE, METHOD FOR MANUFACTURING SILICON INGOT, AND METHOD FOR MANUFACTURING HOMOEPITAXIAL WAFER
(FR) SYSTÈME DE GESTION DE CREUSET, PROCÉDÉ DE GESTION DE CREUSET, PROCÉDÉ DE FABRICATION D'UN CREUSET EN VERRE DE SILICE, PROCÉDÉ DE FABRICATION D'UN LINGOT DE SILICIUM, ET PROCÉDÉ DE FABRICATION D'UNE PLAQUETTE HOMOÉPITAXIQUE
(JA) ルツボ管理システム、ルツボ管理方法、シリカガラスルツボの製造方法、シリコンインゴットの製造方法、ホモエピタキシャルウェーハの製造方法
Abstract:
(EN) The purpose of the present invention is to solve the problem of testing a silica glass crucible before deformation and not being able to identify the problem. The present invention includes: an inner reflected light detection means that emits laser light toward an inner surface of a silica glass crucible and detects the inner surface reflected light; an inner distance calculation means that calculates an inner surface distance on the basis of the detection result; a coordinate calculation means that calculates inner surface coordinates on the basis of the inner surface distance and three-dimensional coordinates which indicate the position of the inner reflected light detection means when the inner surface reflected light, from which the inner surface distance is calculated, is detected; an inner surface image data acquisition means that acquires image data of the inner surface of the silica glass crucible; and a crucible data information storage means that stores, as crucible data information for each silica glass crucible, information associating the image data acquired by the inner surface image data acquisition means and the inner surface coordinates which indicate an imaging location of the image data.
(FR) La présente invention concerne la résolution du problème de test d'un creuset en verre de silice avant déformation sans pouvoir identifier le problème. La présente invention concerne : un moyen de détection de lumière reflétée interne qui émet de la lumière laser vers une surface interne d'un creuset en verre de silice et qui détecte la lumière reflétée de surface interne; un moyen de calcul de distance interne qui calcule une distance de surface interne sur la base du résultat de détection; un moyen de calcul de coordonnées qui calcule les coordonnées de surface interne sur la base de la distance de surface interne et de coordonnées tridimensionnelles qui indiquent la position du moyen de détection de lumière reflétée interne lorsque la lumière reflétée de surface interne, à partir de laquelle la distance de surface interne est calculée, est détectée; un moyen d'acquisition de données d'image de surface interne qui acquiert des données d'image de la surface interne du creuset en verre de silice; et un moyen de stockage d'informations de données sur le creuset qui stocke, comme informations de données sur le creuset pour chaque creuset en verre de silice, des informations associant les données d'image acquises par le moyen d'acquisition de données d'image de surface interne et les coordonnées de surface interne qui indiquent une localisation d'imagerie des données d'image.
(JA) 変形前のシリカガラスルツボを調査して原因を特定することが出来ない、という問題を解決すること。 シリカガラスルツボの内表面に向かってレーザー光を照射し、内表面反射光を検出する内部反射光検出手段と、検出結果に基づいて内表面距離を算出する内部距離算出手段と、内表面距離と当該内表面距離の算出元となる内表面反射光を検出した際の内部反射光検出手段の位置を示す三次元座標とに基づいて内表面座標を算出する座標算出手段と、シリカガラスルツボの内表面の画像データを取得する内表面画像データ取得手段と、内表面画像データ取得手段が取得した画像データと当該画像データの撮影箇所を示す内表面座標とを対応付けた情報をシリカガラスルツボごとのルツボデータ情報として記憶するルツボデータ情報記憶手段と、を有する。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)