Some content of this application is unavailable at the moment.
If this situation persists, please contact us atFeedback&Contact
1. (WO2017110953) FILM FORMING METHOD
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/110953 International Application No.: PCT/JP2016/088256
Publication Date: 29.06.2017 International Filing Date: 21.12.2016
IPC:
C23C 16/448 (2006.01) ,B05D 3/10 (2006.01) ,H01L 21/365 (2006.01) ,H01L 51/44 (2006.01) ,H01L 51/48 (2006.01)
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
448
characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
B PERFORMING OPERATIONS; TRANSPORTING
05
SPRAYING OR ATOMISING IN GENERAL; APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL
D
PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL
3
Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
10
by other chemical means
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
34
the devices having semiconductor bodies not provided for in groups H01L21/06, H01L21/16, and H01L21/18159
36
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
365
using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
42
specially adapted for sensing infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation; specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
44
Details of devices
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
42
specially adapted for sensing infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation; specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
48
Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
Applicants:
株式会社FLOSFIA FLOSFIA INC. [JP/JP]; 京都府京都市西京区御陵大原1番36号 1-36, Goryoohara, Nishikyo-ku, Kyoto-shi Kyoto 6158245, JP
Inventors:
香取 重尊 KATORI Shigetaka; JP
廣木 一亮 HIROKI Kazuaki; JP
織田 真也 ODA Masaya; JP
人羅 俊実 HITORA Toshimi; JP
Priority Data:
2015-25231924.12.2015JP
2016-05630318.03.2016JP
Title (EN) FILM FORMING METHOD
(FR) PROCÉDÉ DE FORMATION DE FILM
(JA) 成膜方法
Abstract:
(EN) Provided is a novel film forming method which is capable of industrially advantageously forming a film, while ensuring or improving the film formation quality. According to the present invention, a starting material solution, which contains an aprotic solvent (a lactone, a lactam or the like) that hardly donates protons, is atomized or formed into droplets (atomization/droplet formation step); the thus-obtained mist or droplets are conveyed to a base, which is disposed within a film formation chamber, by means of a carrier gas (conveyance step); and a film is subsequently formed on the base by having the mist or droplets react preferably at a temperature of 250°C or less (film formation step).
(FR) La présente invention concerne un nouveau procédé de formation de film qui permet de former un film industriellement de manière avantageuse, tout en garantissant ou en améliorant la qualité de la formation du film. Selon la présente invention, une solution de matériau de départ, qui contient un solvant aprotique (une lactone, un lactame ou similaires) qui donne difficilement des protons, est atomisée ou mise sous forme de gouttelettes (étape d'atomisation/formation de gouttelettes) ; le brouillard ou les gouttelettes ainsi obtenus sont transportés vers une base, qui est disposée à l'intérieur d'une chambre de formation de film, au moyen d'un gaz vecteur (étape de transport) ; et un film est ensuite formé sur la base en amenant le brouillard ou les gouttelettes à réagir de préférence à une température inférieure ou égale à 250 °C (étape de formation de film).
(JA) 成膜品質を確保または向上させつつ、工業的有利に成膜することができる新規な成膜方法を提供する。プロトンを供与するのが困難である非プロトン性溶媒(ラクトン類またはラクタム類等)を含む原料溶液を霧化または液滴化し(霧化・液滴化工程)、得られたミストまたは液滴をキャリアガスで成膜室内に設置されている基体まで搬送し(搬送工程)、ついで前記ミストまたは液滴を好ましくは250℃以下の温度で反応させて前記基体上に成膜する(成膜工程)。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
CN108474115US20180369861