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1. (WO2017110763) SILICA GLASS CRUCIBLE, METHOD FOR MANUFACTURING SILICA GLASS CRUCIBLE, SILICON SINGLE CRYSTAL PULLING DEVICE, INGOT, AND HOMOEPITAXIAL WAFER
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/110763 International Application No.: PCT/JP2016/087858
Publication Date: 29.06.2017 International Filing Date: 20.12.2016
IPC:
C30B 29/06 (2006.01) ,C03B 20/00 (2006.01) ,C30B 15/10 (2006.01)
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02
Elements
06
Silicon
C CHEMISTRY; METALLURGY
03
GLASS; MINERAL OR SLAG WOOL
B
MANUFACTURE OR SHAPING OF GLASS, OR OF MINERAL OR SLAG WOOL; SUPPLEMENTARY PROCESSES IN THE MANUFACTURE OR SHAPING OF GLASS, OR OF MINERAL OR SLAG WOOL
20
Processes specially adapted for the production of quartz or fused silica articles
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
15
Single-crystal growth by pulling from a melt, e.g. Czochralski method
10
Crucibles or containers for supporting the melt
Applicants:
株式会社SUMCO SUMCO CORPORATION [JP/JP]; 東京都港区芝浦一丁目2番1号 2-1, Shibaura 1-chome, Minato-ku Tokyo 1058634, JP
Inventors:
佐藤 忠広 SATO Tadahiro; JP
北原 賢 KITAHARA Ken; JP
北原 江梨子 KITAHARA Eriko; JP
須藤 俊明 SUDO Toshiaki; JP
Agent:
野村 一郎 NOMURA Ichiro; JP
Priority Data:
2015-24837621.12.2015JP
2015-24837721.12.2015JP
2015-24837821.12.2015JP
2015-24837921.12.2015JP
Title (EN) SILICA GLASS CRUCIBLE, METHOD FOR MANUFACTURING SILICA GLASS CRUCIBLE, SILICON SINGLE CRYSTAL PULLING DEVICE, INGOT, AND HOMOEPITAXIAL WAFER
(FR) CREUSET EN VERRE DE SILICE AINSI QUE PROCÉDÉ DE FABRICATION DE CELUI-CI, DISPOSITIF DE TIRAGE DE MONOCRISTAUX DE SILICIUM, LINGOT, ET TRANCHE HOMOÉPITAXIALE
(JA) シリカガラスルツボ、シリカガラスルツボの製造方法、シリコン単結晶の引き上げ装置、インゴットおよびホモエピタキシャルウェーハ
Abstract:
(EN) The purpose of the present invention is to provide a silica glass crucible in which inner residual stress has been accurately measured. The present invention is a silica glass crucible that has been measured by a strain measuring device, the silica glass crucible including: a tubular side wall portion; a curved bottom portion; and a corner portion provided between the side wall portion and the bottom portion, and having a curvature that is greater than the curvature of the bottom portion. The strain measuring device includes: a light emitting unit that is disposed to the side of the side wall portion and emits polarized light toward the side wall portion; an imaging unit that captures video corresponding to the polarized light of an upper end surface of the side wall portion; and an output unit that outputs distribution of strain of the silica glass crucible on the basis of the video captured by the imaging unit.
(FR) L'invention fournit un creuset en verre de silice dans lequel une tension rémanente interne est mesurée avec précision. Plus précisément, l'invention concerne un creuset en verre de silice qui est équipé d'une partie paroi latérale de forme cylindrique, d'une partie fond courbée, et d'une partie coin agencée entre la partie paroi latérale et la partie fond, et possédant un facteur de courbure supérieur à celui de la partie fond, et qui est mesuré par un dispositif de mesure de contrainte. Ce dispositif de mesure de contrainte est équipé : d'une partie luminescente qui est disposée sur le côté de la partie paroi latérale, et qui irradie une lumière polarisée vers la partie paroi latérale; d'une partie imagerie capturant une image correspondant à la lumière polarisée d'une face extrémité supérieure de la partie paroi latérale; et d'une partie sortie qui émet en sortie la répartition des contraintes du creuset en verre de silice, sur la base de l'image capturée par la partie imagerie.
(JA) 内部残留応力が正確に測定されたシリカガラスルツボを提供すること。 本発明は、円筒状の側壁部と、湾曲した底部と、側壁部と底部との間に設けられ底部の曲率よりも高い曲率を有するコーナ部と、を備え、歪測定装置で測定されたシリカガラスルツボであって、歪測定装置は、側壁部の側方に配置され、偏光光を側壁部に向けて照射する発光部と、側壁部の上端面の偏光光に応じた映像を取り込む撮像部と、撮像部で取り込んだ映像に基づきシリカガラスルツボの歪の分布を出力する出力部と、を備える。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)