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1. (WO2017110584) COMPOSITION FOR MANUFACTURING ORGANIC SEMICONDUCTOR DEVICE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/110584 International Application No.: PCT/JP2016/087064
Publication Date: 29.06.2017 International Filing Date: 13.12.2016
IPC:
H01L 51/30 (2006.01) ,H01L 51/05 (2006.01) ,H01L 51/40 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05
specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier
30
Selection of materials
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05
specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05
specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier
40
Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
Applicants:
株式会社ダイセル DAICEL CORPORATION [JP/JP]; 大阪府大阪市北区大深町3番1号 3-1, Ofuka-cho, Kita-ku, Osaka-shi, Osaka 5300011, JP
国立大学法人東京大学 THE UNIVERSITY OF TOKYO [JP/JP]; 東京都文京区本郷七丁目3番1号 3-1, Hongo 7-chome, Bunkyo-ku, Tokyo 1138654, JP
Inventors:
鈴木陽二 Suzuki, Youji; JP
横尾健 YOKOO, Takeshi; JP
赤井泰之 AKAI, Yasuyuki; JP
竹谷純一 TAKEYA, Junichi; JP
Agent:
特許業務法人後藤特許事務所 GOTO & CO.; 大阪府大阪市北区紅梅町2番18号 2-18, Kobai-cho, Kita-ku, Osaka-shi, Osaka 5300038, JP
Priority Data:
2015-25036322.12.2015JP
Title (EN) COMPOSITION FOR MANUFACTURING ORGANIC SEMICONDUCTOR DEVICE
(FR) COMPOSITION DESTINÉE À LA FABRICATION D'UN DISPOSITIF À SEMI-CONDUCTEUR ORGANIQUE
(JA) 有機半導体デバイス製造用組成物
Abstract:
(EN) Provided is a composition in which an organic semiconductor material has exceptional solubility, and in which an organic semiconductor device having high carrier mobility can be formed in low temperature environments using a printing method. This composition for manufacturing an organic semiconductor device contains the following organic semiconductor material and a solvent (A). Organic semiconductor material: N-shaped condensed ring pi-conjugated molecules Solvent (A): A compound represented by formula (a). In the formula, L indicates a single bond, –O–, –NH–C(=O)–NH–, –C(=O)–, or –C(=S)–, and k indicates an integer of 0 to 2. R1 indicates a C1-20 alkyl group, a C2-20 alkenyl group, a C3-20 cycloalkyl group, an –ORa group, an –SRa group, an –O(C=O)Ra group, an –RbO(C=O)Ra group, or an optionally substituted amino group. t indicates an integer of 1 or greater.
(FR) L'invention concerne une composition dans laquelle un matériau semi-conducteur organique présente une solubilité exceptionnelle, et avec laquelle un dispositif à semi-conducteur organique présentant une grande mobilité des porteurs peut être formé dans des environnements à basse température au moyen d'un procédé d'impression. Cette composition destinée à la fabrication d'un dispositif à semi-conducteur organique contient le matériau semi-conducteur organique ci-après et un solvant (A). Le matériau semi-conducteur organique est constitué de molécules pi-conjuguées à noyau condensé en N, et le solvant (A) est un composé représenté par la formule (a). Dans la formule, L représente une liaison simple, –O–, –NH–C(=O)–NH–, –C(=O)– ou –C(=S)–, et k représente un entier de 0 à 2. R1 représente un groupe alkyle en C1-20, un groupe alcényle en C2-20, un groupe cycloalkyle en C3-20, un groupe –ORa, un groupe –SRa, un groupe –O(C=O)Ra, un groupe –RbO(C=O)Ra, ou un groupe amino éventuellement substitué. t représente un entier supérieur ou égal à 1.
(JA) 有機半導体材料の溶解性に優れ、低温環境下において、印刷法を用いて、高いキャリア移動度を有する有機半導体デバイスを形成することができる組成物を提供する。 本発明の有機半導体デバイス製造用組成物は、下記有機半導体材料と溶剤(A)を含有する。 有機半導体材料:N字型縮環パイ共役系分子 溶剤(A):下記式(a)で表される化合物。式中、Lは単結合、-O-、-NH-C(=O)-NH-、-C(=O)-、又は-C(=S)-を示し、kは0~2の整数を示す。R1はC1-20アルキル基、C2-20アルケニル基、C3-20シクロアルキル基、-ORa基、-SRa基、-O(C=O)Ra基、-RbO(C=O)Ra基、又は置換若しくは無置換アミノ基を示す。tは1以上の整数を示す。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
CN108475728KR1020180098307EP3396727US20190006603