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1. (WO2017110484) IMAGE SENSOR, ELECTRONIC APPARATUS, CONTROL DEVICE, CONTROL METHOD, AND PROGRAM
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/110484 International Application No.: PCT/JP2016/086481
Publication Date: 29.06.2017 International Filing Date: 08.12.2016
IPC:
H04N 5/378 (2011.01) ,H01L 21/8234 (2006.01) ,H01L 27/088 (2006.01) ,H01L 27/146 (2006.01) ,H03M 1/56 (2006.01) ,H04N 5/357 (2011.01) ,H04N 5/374 (2011.01)
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
N
PICTORIAL COMMUNICATION, e.g. TELEVISION
5
Details of television systems
30
Transforming light or analogous information into electric information
335
using solid-state image sensors [SSIS]
369
SSIS architecture; Circuitry associated therewith
378
Readout circuits, e.g. correlated double sampling [CDS] circuits, output amplifiers or A/D converters
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78
with subsequent division of the substrate into plural individual devices
82
to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822
the substrate being a semiconductor, using silicon technology
8232
Field-effect technology
8234
MIS technology
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
08
including only semiconductor components of a single kind
085
including field-effect components only
088
the components being field-effect transistors with insulated gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14
including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144
Devices controlled by radiation
146
Imager structures
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
M
CODING, DECODING OR CODE CONVERSION, IN GENERAL
1
Analogue/digital conversion; Digital/analogue conversion
12
Analogue/digital converters
50
with intermediate conversion to time interval
56
Input signal compared with linear ramp
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
N
PICTORIAL COMMUNICATION, e.g. TELEVISION
5
Details of television systems
30
Transforming light or analogous information into electric information
335
using solid-state image sensors [SSIS]
357
Noise processing, e.g. detecting, correcting, reducing or removing noise
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
N
PICTORIAL COMMUNICATION, e.g. TELEVISION
5
Details of television systems
30
Transforming light or analogous information into electric information
335
using solid-state image sensors [SSIS]
369
SSIS architecture; Circuitry associated therewith
374
Addressed sensors, e.g. MOS or CMOS sensors
Applicants:
ソニー株式会社 SONY CORPORATION [JP/JP]; 東京都港区港南1丁目7番1号 1-7-1, Konan, Minato-ku, Tokyo 1080075, JP
Inventors:
青木 健之 AOKI Takeshi; JP
Agent:
西川 孝 NISHIKAWA Takashi; JP
稲本 義雄 INAMOTO Yoshio; JP
Priority Data:
2015-24978522.12.2015JP
Title (EN) IMAGE SENSOR, ELECTRONIC APPARATUS, CONTROL DEVICE, CONTROL METHOD, AND PROGRAM
(FR) CAPTEUR D’IMAGE, APPAREIL ÉLECTRONIQUE, DISPOSITIF DE COMMANDE, PROCÉDÉ DE COMMANDE ET PROGRAMME
(JA) イメージセンサ、電子機器、制御装置、制御方法、及び、プログラム
Abstract:
(EN) The present technology relates to an image sensor, an electronic apparatus, a control device, a control method, and a program by which it is possible to achieve both a higher S/N and a higher frame rate. An A/D conversion unit has a comparator in which differential pairs are provided at an input stage. The differential pairs each include a plurality of transistors as a first transistor and a second transistor which are the pair of transistors constituting the differential pair. The A/D conversion unit performs A/D conversion on an electric signal by comparing a reference signal with a changing level to an electric signal outputted by an imaging unit that outputs an electric signal by performing photoelectric conversion. The comparator is controlled such that, according to the amount of light entering the imaging unit, transistors to be operated among the plurality of transistors are selected as active transistors and the active transistors are operated. The present technology can, for example, be applied to an image sensor or the like that captures images.
(FR) La présente invention concerne un capteur d’image, un appareil électronique, un dispositif de commande, un procédé de commande et un programme au moyen desquels il est possible d’obtenir à la fois un rapport de signal sur bruit supérieur et une fréquence de trames supérieure. Une unité de conversion analogique/numérique comprend un comparateur dans lequel des paires différentielles sont disposées au niveau d’un étage d’entrée. Les paires différentielles comprennent chacune une pluralité de transistors en tant que premier transistor et second transistor qui sont la paire de transistors constituant la paire différentielle. L'unité de conversion analogique/numérique réalise une conversion analogique/numérique sur un signal électrique par comparaison d’un signal de référence avec un niveau de changement à un signal électrique délivré par une unité d’imagerie qui délivre un signal électrique par réalisation d’une conversion photoélectrique. Le comparateur est commandé de telle sorte que, selon la quantité de lumière entrant dans l’unité d’imagerie, des transistors à commander parmi la pluralité de transistors sont sélectionnés en tant que transistors actifs et les transistors actifs sont commandés. La présente invention peut, par exemple, être appliquée à un capteur d’image ou analogue qui capture des images.
(JA) 本技術は、高S/N化と高フレームレート化との両方を実現することができるようにするイメージセンサ、電子機器、制御装置、制御方法、及び、プログラムに関する。 AD変換部は、入力段に差動対が設けられたコンパレータを有する。差動対は、その差動対を構成するペアのトランジスタである第1のトランジスタ及び第2のトランジスタとして、それぞれ複数のトランジスタを有する。AD変換部は、レベルが変化する参照信号と、光電変換を行って電気信号を出力する撮像部が出力する電気信号とを比較することにより、電気信号のAD変換を行う。コンパレータについては、撮像部に入射する光の光量に応じて、複数のトランジスタの中で、動作させるトランジスタがアクティブトランジスタとして選択され、アクティブトランジスタが動作するように制御される。本技術は、例えば、画像を撮像するイメージセンサ等に適用することができる。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
CN107736015US20180124345US20180160065JPWO2017110484