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1. (WO2017110315) POLISHING COMPOSITION AND METHOD FOR POLISHING SILICON SUBSTRATE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/110315 International Application No.: PCT/JP2016/083934
Publication Date: 29.06.2017 International Filing Date: 16.11.2016
IPC:
H01L 21/304 (2006.01) ,B24B 37/00 (2012.01) ,C09K 3/14 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304
Mechanical treatment, e.g. grinding, polishing, cutting
B PERFORMING OPERATIONS; TRANSPORTING
24
GRINDING; POLISHING
B
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
37
Lapping machines or devices; Accessories
C CHEMISTRY; METALLURGY
09
DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
K
MATERIALS FOR APPLICATIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
3
Materials not provided for elsewhere
14
Anti-slip materials; Abrasives
Applicants:
株式会社フジミインコーポレーテッド FUJIMI INCORPORATED [JP/JP]; 愛知県清須市西枇杷島町地領二丁目1番地1 1-1, Chiryo 2-chome, Nishibiwajima-cho, Kiyosu-shi, Aichi 4528502, JP
Inventors:
秋月 麗子 AKIZUKI Reiko; JP
高見 信一郎 TAKAMI Shinichiro; JP
田畑 誠 TABATA Makoto; JP
Agent:
森 哲也 MORI Tetsuya; JP
鈴木 壯兵衞 SUZUKI Sohbe; JP
田中 秀▲てつ▼ TANAKA Hidetetsu; JP
山田 勇毅 YAMADA Yuki; JP
Priority Data:
2015-25125124.12.2015JP
Title (EN) POLISHING COMPOSITION AND METHOD FOR POLISHING SILICON SUBSTRATE
(FR) COMPOSITION DE POLISSAGE ET PROCÉDÉ DE POLISSAGE DE SUBSTRAT DE SILICIUM
(JA) 研磨用組成物及びシリコン基板の研磨方法
Abstract:
(EN) Provided is a polishing composition and a method for polishing a silicon substrate capable of realizing a polished surface having high flatness. The polishing composition contains abrasive grains, including silica. The silica includes bonded particles in which two or more primary particles are bound directly, or via connectors constituted from the same material as the primary particles. The number of all the primary particles included in the bonded particles is 10% or more of the number of all the primary particles included in the abrasive grains. The average value of the area of the bonded portions of the primary particles constituting the bonded particles is 12% or less of the surface area of the primary particles, as calculated based on the average primary particle size of the primary particles constituting the bonded particles.
(FR) L’invention concerne une composition de polissage et un procédé de polissage d’un substrat de silicium pouvant réaliser une surface polie dont la platitude est élevée. La composition de polissage contient des grains abrasifs, incluant de la silice. La silice inclut des particules liées dans lesquelles deux particules primaires ou plus sont liées directement, ou par des liaisons constituées à partir du même matériau que les particules primaires. Le nombre de toutes les particules primaires incluses dans les particules liées est supérieur ou égal à 10 % du nombre de toutes les particules primaires incluses dans les grains abrasifs. La valeur moyenne de l’aire des parties liées des particules primaires constituant les particules liées est inférieure ou égale à 12 % de l’aire de surface des particules primaires, calculée sur la base de la taille moyenne de particules primaires des particules primaires constituant les particules liées.
(JA) 高い平坦性を有する被研磨面を実現可能な研磨用組成物及びシリコン基板の研磨方法を提供する。研磨用組成物は、シリカを含む砥粒を含有する。シリカは、2個以上の一次粒子が直接、又は、一次粒子と同一の材質で構成された結合子を介して結合してなる結合粒子を含む。結合粒子に含まれる全ての一次粒子の個数は、砥粒に含まれる全ての一次粒子の個数の10%以上である。結合粒子を構成する一次粒子の結合部分の面積の平均値は、結合粒子を構成する一次粒子の平均一次粒子径から算出される一次粒子の表面積の12%以下である。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, KE, KG, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)