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1. (WO2017099925) COUPLED INDUCTOR-BASED RESONATOR
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/099925 International Application No.: PCT/US2016/060980
Publication Date: 15.06.2017 International Filing Date: 08.11.2016
IPC:
H03B 5/12 (2006.01) ,H01L 23/522 (2006.01) ,H01L 27/088 (2006.01)
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
B
GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
5
Generation of oscillations using amplifier with regenerative feedback from output to input
08
with frequency-determining element comprising lumped inductance and capacitance
12
active element in amplifier being semiconductor device
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
52
Arrangements for conducting electric current within the device in operation from one component to another
522
including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
08
including only semiconductor components of a single kind
085
including field-effect components only
088
the components being field-effect transistors with insulated gate
Applicants:
QUALCOMM INCORPORATED [US/US]; ATTN: International IP Administration 5775 Morehouse Drive San Diego, California 92121-1714, US
Inventors:
KHALILI, Alireza; US
TAGHIVAND, Mazhareddin; US
KAVOUSIAN, Amirpouya; US
Agent:
ROBERTSON, Daniel K.; US
CAMPBELL, Richard E.; US
Priority Data:
14/965,76010.12.2015US
Title (EN) COUPLED INDUCTOR-BASED RESONATOR
(FR) RÉSONATEUR FAISANT APPEL À UN INDUCTEUR COUPLÉ
Abstract:
(EN) A two-walled coupled inductor includes an outer wall and an inner wall separated by a slit. The outer wall has a first width and the inner wall has a second width. The inner wall and the outer wall may be configured to be coupled to oscillator circuitry. The two-walled coupled inductor may include an electrically conductive stub coupled to the outer wall to be coupled to a power supply. A common mode current flows through the outer wall, and the stub if one is present, and a differential mode current flows through both the outer wall and the inner wall, but not the stub. The first and second widths, and dimensions of the stub, may be sized to increase an inductance of the common mode compared to an inductance of the differential mode, thereby reducing phase noise of the inductor-based resonator.
(FR) La présente invention concerne un inducteur couplé à deux parois comprenant une paroi externe et une paroi interne séparées par une fente. La paroi externe présente une première largeur et la paroi interne présente une seconde largeur. La paroi interne et la paroi externe peuvent être configurées de sorte à être couplées à un ensemble de circuits d'oscillateur. L'inducteur couplé à deux parois peut comprendre une embase électroconductrice couplée à la paroi externe qui doit être couplée à une alimentation électrique. Un courant de mode commun circule à travers la paroi externe et l'embase si elle est présente, et un courant de mode différentiel circule à travers la paroi externe et la paroi interne mais pas à travers l'embase. Les première et seconde largeurs ainsi que les dimensions de l'embase peuvent être dimensionnées de sorte à augmenter l'inductance en mode commun par rapport à l'inductance en mode différentiel, ce qui permet de réduire le bruit de phase du résonateur faisant appel à un inducteur.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)