Search International and National Patent Collections
Some content of this application is unavailable at the moment.
If this situation persists, please contact us atFeedback&Contact
1. (WO2017099918) TOP GATE METAL OXIDE THIN FILM TRANSISTOR SWITCHING DEVICE FOR IMAGING APPLICATIONS
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/099918 International Application No.: PCT/US2016/060815
Publication Date: 15.06.2017 International Filing Date: 07.11.2016
IPC:
H01L 27/12 (2006.01) ,H01L 27/14 (2006.01) ,H01L 27/146 (2006.01) ,H01L 31/028 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12
the substrate being other than a semiconductor body, e.g. an insulating body
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14
including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14
including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144
Devices controlled by radiation
146
Imager structures
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248
characterised by their semiconductor bodies
0256
characterised by the material
0264
Inorganic materials
028
including, apart from doping material or other impurities, only elements of the fourth group of the Periodic System
Applicants:
DPIX, LLC [US/US]; 1635 Aeroplaza Drive Colorado Springs, Colorado 80916, US
Inventors:
PARK, Jungwon; US
NAGARAJAN, Karthik; US
PARK, Byung-Kyu; US
O'ROURKE, Shawn Michael; US
Agent:
MEZA, Peter J.; US
CHEN, Steven P.; US
Priority Data:
15/344,33504.11.2016US
62/386,68209.12.2015US
Title (EN) TOP GATE METAL OXIDE THIN FILM TRANSISTOR SWITCHING DEVICE FOR IMAGING APPLICATIONS
(FR) DISPOSITIF DE COMMUTATION DE TRANSISTOR À COUCHES MINCES D'OXYDE DE MÉTAL DE GRILLE SUPÉRIEURE POUR APPLICATIONS D'IMAGERIE
Abstract:
(EN) A method of manufacturing an image sensor device includes providing a substrate; forming a buffer layer on the substrate; forming a metal oxide channel on the buffer layer; forming a gate oxide layer on the buffer layer and the metal oxide channel; forming a gate metal layer on the gate oxide layer; forming a photodiode stack on the gate metal layer; patterning the gate oxide layer and the gate metal layer to form a first portion under the photodiode stack, and a second portion comprising a transistor; forming an interlayer dielectric layer over at least the photodiode stack and the transistor; forming a plurality of vias in the interlayer dielectric layer; and metalizing the vias to form contacts to the image sensor device.
(FR) Un procédé de fabrication d'un dispositif capteur d'image consiste à utiliser un substrat ; à former une couche tampon sur le substrat ; à former un canal d'oxyde de métal sur la couche tampon ; à former une couche d'oxyde de grille sur la couche tampon et le canal d'oxyde de métal ; à former une couche de métal de grille sur la couche d'oxyde de grille ; à former un empilement de photodiodes sur la couche de métal de grille ; à former des motifs sur la couche d'oxyde de grille et la couche de métal de grille en vue de former une première partie sous l'empilement de photodiodes, et une seconde partie comprenant un transistor ; à former une couche diélectrique intermédiaire sur au moins l'empilement de photodiodes et le transistor ; à former une pluralité de trous d'interconnexion dans la couche diélectrique intermédiaire ; et à métalliser les trous d'interconnexion pour former des contacts sur le dispositif capteur d'image.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)