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1. (WO2017099905) LASER LIFT-OFF ON ISOLATED III-NITRIDE LIGHT ISLANDS FOR INTER-SUBSTRATE LED TRANSFER
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/099905 International Application No.: PCT/US2016/059736
Publication Date: 15.06.2017 International Filing Date: 31.10.2016
IPC:
H05B 33/14 (2006.01) ,H05B 33/20 (2006.01) ,H01L 33/32 (2010.01)
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
B
ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
33
Electroluminescent light sources
12
Light sources with substantially two-dimensional radiating surfaces
14
characterised by the chemical or physical composition or the arrangement of the electroluminescent material
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
B
ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
33
Electroluminescent light sources
12
Light sources with substantially two-dimensional radiating surfaces
20
characterised by the chemical or physical composition or the arrangement of the material in which the electroluminescent material is embedded
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
26
Materials of the light emitting region
30
containing only elements of group III and group V of the periodic system
32
containing nitrogen
Applicants:
GLO AB [SE/SE]; Scheelevägen 22 Lund, 223 63, US
Inventors:
THOMPSON, Daniel Bryce; US
Agent:
RADOMSKY, Leon; US
HUANG, Stephen; US
HANSEN, Robert; US
ROBERTS, Jon; US
MAZAHERY, Benjamin; US
SULSKY, Martin; US
JOHNSON, Timothy; US
COHN, Joanna; US
LING, Yutian; US
GAYOSO, Tony; US
RUTT, Steven; US
O'BRIEN, Michelle; US
HYAMS, David; US
SIMON, Phyllis; US
GAUL, Allison; US
MURPHY, Timothy; US
PARK, Byeongju; US
GILL, Matthew; US
CONNOR, David; US
BOUSHEHRI, Darjush; US
GILL, Matthew; US
Priority Data:
62/263,95507.12.2015US
Title (EN) LASER LIFT-OFF ON ISOLATED III-NITRIDE LIGHT ISLANDS FOR INTER-SUBSTRATE LED TRANSFER
(FR) DÉCOLLEMENT LASER SUR DES ÎLOTS DE LUMIÈRE DE NITRURE III ISOLÉS POUR UN TRANSFERT DE DEL ENTRE DES SUBSTRATS
Abstract:
(EN) A laser liftoff process is provided. A device layer can be provided on a transfer substrate. Channels can be formed through the device layer such that devices comprising remaining portions of the device layer are laterally isolated from one another by the channels. The transfer substrate can be bonded to a target substrate through an adhesion layer. Surface portions of the devices can be removed from an interface region between the transfer substrate and the devices by irradiating a laser beam through the transfer substrate onto the devices. The laser irradiation decomposes the III-V compound semiconductor material. The channels provide escape paths for the gaseous products (such as nitrogen gas) that are generated by the laser irradiation. The transfer substrate is separated from a bonded assembly including the target substrate and remaining portions of the devices. The devices can include a III-V compound semiconductor material.
(FR) La présente invention concerne un procédé de décollement au laser. Une couche de dispositif peut être disposée sur un substrat de transfert. Des canaux peuvent être formés dans la couche de dispositif de telle sorte que des dispositifs comprenant des parties restantes de la couche de dispositif soient latéralement isolés les uns des autres par les canaux. Le substrat de transfert peut être collé à un substrat cible au moyen d'une couche adhésive. Des parties de surface des dispositifs peuvent être retirées d'une région d'interface entre le substrat de transfert et les dispositifs par irradiation d'un faisceau laser à travers le substrat de transfert sur les dispositifs. L'irradiation laser décompose le matériau semi-conducteur à base de composé III-V. Les canaux offrent des trajets de fuite pour les produits gazeux (tels que l'azote gazeux) qui sont produits par le rayonnement laser. Le substrat de transfert est séparé d'un ensemble collé comprenant le substrat cible et des parties restantes des dispositifs. Les dispositifs peuvent comprendre un matériau semi-conducteur à base de composé III-V.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP3387882