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1. (WO2017099211) CLEANING LIQUID, METHOD FOR CLEANING SUBSTRATE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/099211 International Application No.: PCT/JP2016/086675
Publication Date: 15.06.2017 International Filing Date: 09.12.2016
IPC:
H01L 21/304 (2006.01) ,C11D 7/32 (2006.01) ,C11D 17/08 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304
Mechanical treatment, e.g. grinding, polishing, cutting
C CHEMISTRY; METALLURGY
11
ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
D
DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
7
Compositions of detergents based essentially on non-surface-active compounds
22
Organic compounds
32
containing nitrogen
C CHEMISTRY; METALLURGY
11
ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
D
DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
17
Detergent materials or soaps characterised by their shape or physical properties
08
Liquid soap; capsuled
Applicants:
富士フイルム株式会社 FUJIFILM CORPORATION [JP/JP]; 東京都港区西麻布2丁目26番30号 26-30, Nishiazabu 2-chome, Minato-ku, Tokyo 1068620, JP
Inventors:
高橋 智威 TAKAHASHI Tomonori; JP
高橋 智美 TAKAHASHI Satomi; JP
清水 哲也 SHIMIZU Tetsuya; JP
吉井 朗子 YOSHII Akiko; JP
室 祐継 MURO Naotsugu; JP
Agent:
渡辺 望稔 WATANABE Mochitoshi; JP
三和 晴子 MIWA Haruko; JP
伊東 秀明 ITOH Hideaki; JP
三橋 史生 MITSUHASHI Fumio; JP
Priority Data:
2015-24270811.12.2015JP
Title (EN) CLEANING LIQUID, METHOD FOR CLEANING SUBSTRATE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
(FR) LIQUIDE DE NETTOYAGE, PROCÉDÉ DE NETTOYAGE DE SUBSTRAT ET PROCÉDÉ DE FABRICATION DE DISPOSITIF À SEMI-CONDUCTEUR
(JA) 洗浄液、基板洗浄方法、及び、半導体デバイスの製造方法
Abstract:
(EN) The present invention addresses the problem of providing: a cleaning liquid used on a substrate provided with a metal hard mask including any one or more of Cu, Co, W, AlOx, AlN, AlOxNy, WOx, Ti, TiN, ZrOx, HfOx, and TaOx, the cleaning liquid having excellent prevention of corrosion of a cleaning object while also having excellent residue removal performance; a method for cleaning a substrate using the cleaning liquid; and a method for manufacturing a semiconductor device. This cleaning liquid is a cleaning liquid for a substrate provided with a metal hard mask including any one or more of Cu, Co, W, AlOx, AlN, AlOxNy, WOx, Ti, TiN, ZrOx, HfOx, and TaOx, the cleaning liquid including water and at least one species selected from a hydroxylamine and a hydroxylamine salt. In the formulas, x and y are numbers represented by x = 1-3 and y = 1-2, respectively.
(FR) La présente invention aborde le problème de la fourniture : d'un liquide de nettoyage utilisé sur un substrat comportant un masque dur métallique comprenant l'un quelconque ou plusieurs des éléments parmi Cu, Co, W, AlOx, AlN, AlOxNy, WOx, Ti, TiN, ZrOx, HfOx, et TaOx, le liquide de nettoyage ayant une excellente protection contre la corrosion d'un objet de nettoyage tout en ayant également une excellente performance d'élimination de résidu ; d'un procédé de nettoyage d'un substrat à l'aide du liquide de nettoyage ; et d'un procédé de fabrication d'un dispositif à semi-conducteur. Ce liquide de nettoyage est un liquide de nettoyage pour un substrat comportant un masque dur métallique comprenant l'un quelconque ou plusieurs des éléments parmi Cu, Co, W, AlOx, AlN, AlOxNy, WOx, Ti, TiN, ZrOx, HfOx, et TaOx, le liquide de nettoyage comprenant de l'eau et au moins une espèce choisie parmi une hydroxylamine et un sel d'hydroxylamine. Dans les formules, x et y sont des nombres représentés par x = 1-3 et y = 1-2, respectivement.
(JA) 本発明の課題は、Cu、Co、W、AlOx、AlN、AlOxNy、WOx、Ti、TiN、ZrOx、HfOx及びTaOxのいずれか1以上を含むメタルハードマスクを備えた基板に用いられる洗浄液であって、残渣物除去性能に優れつつ、洗浄対象物に対する腐食防止性にも優れた洗浄液、並びに、上記洗浄液を用いた基板洗浄方法及び半導体デバイスの製造方法を提供することにある。 本発明の洗浄液は、Cu、Co、W、AlOx、AlN、AlOxNy、WOx、Ti、TiN、ZrOx、HfOx及びTaOxのいずれか1以上を含むメタルハードマスクを備えた基板の洗浄液であって、ヒドロキシルアミン及びヒドロキシルアミン塩から選ばれる少なくとも1種と水とを含む。なお、x、yは、それぞれ、x=1~3、y=1~2で表される数である。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
KR1020180077250