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1. (WO2017099057) ATOMIC LAYER DEPOSITION APPARATUS AND ATOMIC LAYER DEPOSITION METHOD
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/099057 International Application No.: PCT/JP2016/086181
Publication Date: 15.06.2017 International Filing Date: 06.12.2016
IPC:
C23C 16/54 (2006.01) ,H01L 21/31 (2006.01) ,H01L 21/316 (2006.01)
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
54
Apparatus specially adapted for continuous coating
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
314
Inorganic layers
316
composed of oxides or glassy oxides or oxide-based glass
Applicants:
凸版印刷株式会社 TOPPAN PRINTING CO., LTD. [JP/JP]; 東京都台東区台東1丁目5番1号 5-1, Taito 1-chome, Taito-ku, Tokyo 1100016, JP
Inventors:
加納 満 KANO Mitsuru; JP
Agent:
鈴木 史朗 SUZUKI Shirou; JP
志賀 正武 SHIGA Masatake; JP
高橋 詔男 TAKAHASHI Norio; JP
伏見 俊介 FUSHIMI Shunsuke; JP
Priority Data:
2015-23867107.12.2015JP
Title (EN) ATOMIC LAYER DEPOSITION APPARATUS AND ATOMIC LAYER DEPOSITION METHOD
(FR) APPAREIL DE DÉPÔT DE COUCHE ATOMIQUE ET PROCÉDÉ DE DÉPÔT DE COUCHE ATOMIQUE
(JA) 原子層堆積装置および原子層堆積方法
Abstract:
(EN) An atomic layer deposition apparatus for forming an atomic layer on a flexible substrate by atomic layer deposition, wherein: the atomic layer deposition apparatus is provided with an unwinding chamber with an unwinding roller for unwinding the flexible substrate, a winding chamber with a winding roll for winding the flexible substrate on which the atomic layer has been formed, multiple reaction chambers provided between the unwinding chamber and the winding chamber so that the flexible substrate can pass therethrough, a first supply part for holding a gas comprising a first precursor, a first supply pipe connected to the first supply part, a second supply part for holding a purge gas, a second supply pipe connected to the second supply part, a third supply part for holding a gas comprising a second precursor, a third supply pipe connected to the third supply part, and a discharge pipe connected to the multiple reaction chambers; at least one of the first supply pipe, the second supply pipe and the third supply pipe is connected to each of the multiple reaction chambers; and to at least one of the multiple reaction chambers, at least two of the first supply pipe, the second supply pipe and the third supply pipe are connected and the reaction chamber(s) are configured so that the gas species and gas conditions therein are adjusted.
(FR) L'invention porte sur un appareil de dépôt de couche atomique destiné à former une couche atomique sur un substrat souple par dépôt de couche atomique. L'appareil de dépôt de couche atomique est pourvu d'une chambre de déroulement avec un rouleau dérouleur pour dérouler le substrat souple, une chambre d'enroulement avec un rouleau enrouleur pour enrouler le substrat souple sur lequel a été formée la couche atomique, multiples chambres de réaction disposées entre la chambre de déroulement et la chambre d'enroulement de façon à pouvoir être traversées par le substrat souple, une première partie d'alimentation destinée à contenir un gaz comprenant un premier précurseur, une première conduite d'alimentation reliée à la première partie d'alimentation, une deuxième partie d'alimentation destinée à contenir un gaz de purge, une deuxième conduite d'alimentation reliée à la deuxième partie d'alimentation, une troisième partie d'alimentation destinée à contenir un gaz comprenant un second précurseur, une troisième conduite d'alimentation reliée à la troisième partie d'alimentation et une conduite d'évacuation connectée aux multiples chambres de réaction, la première conduite d'alimentation, la deuxième conduite d'alimentation et/ou la troisième conduite d'alimentation étant reliée à chacune des multiples chambres de réaction ; l'une au moins des multiples chambres de réaction étant reliée à au moins deux conduites parmi la première conduite d'alimentation, la deuxième conduite d'alimentation et la troisième conduite d'alimentation et la ou les chambres de réaction étant configurées de façon à permettre de régler les espèces gazeuses et les conditions gazeuses dans ces dernières.
(JA) 原子層堆積装置は、フレキシブル基材に原子層堆積法により原子層を形成する原子層堆積装置であって、前記フレキシブル基材を巻き出す巻き出しロールを有する巻き出し室と、前記原子層が形成された前記フレキシブル基材を巻き取る巻き取りロールを有する巻き取り室と、前記巻き出し室と前記巻き取り室との間に、前記フレキシブル基材が通過可能に設けられた複数の反応室と、第一前駆体を含むガスを収容する第一供給部と、前記第一供給部と接続された第一供給管と、パージガスを収容する第二供給部と、前記第二供給部と接続された第二供給管と、第二前駆体を含むガスを収容する第三供給部と、前記第三供給部と接続された第三供給管と、前記複数の反応室に接続された排気管と、を備え、前記複数の反応室のそれぞれには、前記第一供給管、前記第二供給管、および前記第三供給管の少なくとも一つが接続されており、前記複数の反応室の少なくとも一つには、前記第一供給管、前記第二供給管、および前記第三供給管のうち少なくとも二つが接続されており、かつ反応室内のガス種およびガス条件を調節するように構成されている。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, KE, KG, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)