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1. (WO2017099020) METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING SOLAR CELL
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/099020 International Application No.: PCT/JP2016/085915
Publication Date: 15.06.2017 International Filing Date: 02.12.2016
IPC:
H01L 21/22 (2006.01) ,H01L 21/223 (2006.01) ,H01L 21/225 (2006.01) ,H01L 31/068 (2012.01) ,H01L 31/18 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
22
Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions; Redistribution of impurity materials, e.g. without introduction or removal of further dopant
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
22
Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions; Redistribution of impurity materials, e.g. without introduction or removal of further dopant
223
using diffusion into, or out of, a solid from or into a gaseous phase
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
22
Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions; Redistribution of impurity materials, e.g. without introduction or removal of further dopant
225
using diffusion into, or out of, a solid from or into a solid phase, e.g. a doped oxide layer
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04
adapted as conversion devices
06
characterised by at least one potential-jump barrier or surface barrier
068
the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Applicants:
東レ株式会社 TORAY INDUSTRIES, INC. [JP/JP]; 東京都中央区日本橋室町2丁目1番1号 1-1, Nihonbashi-Muromachi 2-chome, Chuo-ku, Tokyo 1038666, JP
Inventors:
池上 由洋 IKEGAMI, Yoshihiro; JP
稲葉 智雄 INABA, Sachio; JP
Priority Data:
2015-23819107.12.2015JP
Title (EN) METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING SOLAR CELL
(FR) PROCÉDÉ DE PRODUCTION D'ÉLÉMENT SEMI-CONDUCTEUR ET PROCÉDÉ DE PRODUCTION DE CELLULE SOLAIRE
(JA) 半導体素子の製造方法および太陽電池の製造方法
Abstract:
(EN) A method for producing a semiconductor element using a plurality of semiconductor substrates, which is characterized by comprising the steps (a)-(c) described below and by arranging a pair of semiconductor substrates so that surfaces, on which impurity diffusing composition films of a first conductivity type are formed, face each other in the steps (b) and (c). (a) a step for forming an impurity diffusing composition film of a first conductivity type on one surface of each semiconductor substrate by applying an impurity diffusing composition of the first conductivity type thereto (b) a step for forming impurity diffusion layers of the first conductivity type by heating the semiconductor substrates, on which the impurity diffusing composition films of the first conductivity type have been respectively formed, thereby diffusing an impurity of the first conductivity type into the semiconductor substrates (c) a step for forming impurity diffusion layers of a second conductivity type by heating the semiconductor substrates in an atmosphere having a gas that contains an impurity of the second conductivity type, thereby diffusing the impurity of the second conductivity type into the other surface of each semiconductor substrate Consequently, the present invention provides a method for producing a semiconductor element and a method for producing a solar cell, which are capable of efficiently producing a semiconductor element and a solar cell by reducing the number of steps.
(FR) Procédé de production d'un élément semi-conducteur à l'aide d'une pluralité de substrats semi-conducteurs, qui est caractérisé en ce qu'il comprend les étapes (a)-(c) décrites ci-dessous et par l'agencement d'une paire de substrats semi-conducteurs de telle sorte que les surfaces, sur lesquelles des films de composition de diffusion d'impureté d'un premier type de conductivité sont formés, se font mutuellement face dans les étapes (b) et (c). (a) une étape de formation d'un film de composition de diffusion d'impuretés d'un premier type de conductivité sur une première surface de chaque substrat semi-conducteur par application d'une composition de diffusion d'impuretés du premier type de conductivité à celui-ci, (b) une étape de formation de couches de diffusion d'impuretés du premier type de conductivité par chauffage des substrats semi-conducteurs, sur lesquels les films de composition de diffusion d'impuretés du premier type de conductivité ont été formés respectivement, ce qui permet de diffuser une impureté du premier type de conductivité dans les substrats semi-conducteurs, (c) une étape de formation de couches de diffusion d'impuretés d'un second type de conductivité par chauffage des substrats semi-conducteurs dans une atmosphère comportant un gaz qui contient une impureté du second type de conductivité, ce qui permet de diffuser l'impureté du second type de conductivité dans l'autre surface de chaque substrat semi-conducteur. En conséquence, la présente invention concerne un procédé de production d'un élément semi-conducteur et un procédé de production d'une cellule solaire, ce qui permet de produire de manière efficace un élément semi-conducteur et une cellule solaire par la réduction du nombre d'étapes.
(JA) 複数の半導体基板を用いた半導体素子の製造方法であって、下記(a)~(c)の工程を含み、(b)及び(c)の工程において、二枚一組の半導体基板を、各々の第一導電型の不純物拡散組成物膜が形成された面が互いに向い合せになるように配置することを特徴とする半導体素子の製造方法。 (a)各半導体基板の一方の面に第一導電型の不純物拡散組成物を塗布して第一導電型の不純物拡散組成物膜を形成する工程。(b)前記第一導電型の不純物拡散組成物膜が形成された半導体基板を加熱して、前記半導体基板へ前記第一導電型の不純物を拡散して、第一導電型の不純物拡散層を形成する工程。(c)第二導電型の不純物を含むガスを有する雰囲気下で前記半導体基板を加熱して、前記半導体基板の他方の面に第二導電型の不純物を拡散して、第二導電型の不純物拡散層を形成する工程。 工程数を低減して効率的に半導体素子および太陽電池を製造することができる半導体素子および太陽電池の製造方法を提供する。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
CN108391449JPWO2017099020