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1. (WO2017098809) ACOUSTIC WAVE DEVICE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/098809 International Application No.: PCT/JP2016/080816
Publication Date: 15.06.2017 International Filing Date: 18.10.2016
IPC:
H03H 9/25 (2006.01) ,H01L 21/60 (2006.01)
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
H
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9
Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
25
Constructional features of resonators using surface acoustic waves
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50
Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
60
Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
Applicants:
株式会社村田製作所 MURATA MANUFACTURING CO., LTD. [JP/JP]; 京都府長岡京市東神足1丁目10番1号 10-1, Higashikotari 1-chome, Nagaokakyo-shi, Kyoto 6178555, JP
Inventors:
関家 大輔 SEKIYA, Daisuke; JP
平野 康彦 HIRANO, Yasuhiko; JP
Agent:
吉川 修一 YOSHIKAWA, Shuichi; JP
傍島 正朗 SOBAJIMA, Masaaki; JP
Priority Data:
2015-24259611.12.2015JP
Title (EN) ACOUSTIC WAVE DEVICE
(FR) DISPOSITIF À ONDES ACOUSTIQUES
(JA) 弾性波装置
Abstract:
(EN) An acoustic wave device (1) is provided with: a piezoelectric substrate (10); an interdigital (IDT) electrode (11) and an electrode pad (13), which are formed on a surface (10a) of the piezoelectric substrate (10); a supporting layer (15) formed on the surface (10a) such that the supporting layer surrounds the IDT electrode (11); a first cover layer (16) and a second cover layer (17), which are formed on the supporting layer (15), and which seal, with the supporting layer (15) and the piezoelectric substrate (10), the IDT electrode (11) in a hollow space (14); an under-bump metal (UBM) (21) bonded to the electrode pad (13); and a bump (20) bonded on the UBM (21). The shape of an UBM (21) surface bonded to the bump (20) is spherical with a convex surface on the bump (20) side.
(FR) L'invention concerne un dispositif à ondes acoustiques (1) qui comporte : un substrat piézoélectrique (10) ; une électrode interdigitée (IDT) (11) et un plot d'électrode (13), qui sont formés sur une surface (10a) du substrat piézoélectrique (10) ; une couche de support (15) formée sur la surface (10a) de telle sorte que la couche de support entoure l'électrode IDT (11) ; une première couche de recouvrement (16) et une seconde couche de recouvrement (17), qui sont formées sur la couche de support, et qui assurent l'étanchéité, la couche de support (15) et le substrat piézoélectrique (10), l'électrode IDT (11) étant dans un espace creux ; une métallisation sous bosse (UBM) (21) collée au plot d'électrode (13) ; et une bosse (20) collée sur l'UBM (21). La forme d'une surface de l'UBM (21) collée à la bosse (20) est sphérique avec une surface convexe du côté de la bosse (20).
(JA) 弾性波装置(1)は、圧電基板(10)と、圧電基板(10)の表面(10a)上に形成されたIDT電極(11)および電極パッド(13)と、表面(10a)上にIDT電極(11)を囲むように形成された支持層(15)と、支持層(15)上に形成されており、支持層(15)および圧電基板(10)と共にIDT電極(11)を中空空間(14)で封止している第1カバー層(16)および第2カバー層(17)と、電極パッド(13)に接合されたUBM(21)と、UBM(21)上に接合されたバンプ(20)とを備え、UBM(21)のバンプ(20)との接合面形状は、バンプ(20)側に凸の球面形状である。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
CN108292914US20180241370