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1. (WO2017098769) LIGHT-RECEIVING ELEMENT, MANUFACTURING METHOD FOR LIGHT-RECEIVING ELEMENT, IMAGING ELEMENT, AND ELECTRONIC DEVICE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/098769 International Application No.: PCT/JP2016/077091
Publication Date: 15.06.2017 International Filing Date: 14.09.2016
IPC:
H01L 31/10 (2006.01) ,H01L 27/144 (2006.01) ,H01L 27/146 (2006.01) ,H04N 5/33 (2006.01) ,H04N 5/369 (2011.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
in which radiation controls flow of current through the device, e.g. photoresistors
10
characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14
including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144
Devices controlled by radiation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14
including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144
Devices controlled by radiation
146
Imager structures
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
N
PICTORIAL COMMUNICATION, e.g. TELEVISION
5
Details of television systems
30
Transforming light or analogous information into electric information
33
Transforming infra-red radiation
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
N
PICTORIAL COMMUNICATION, e.g. TELEVISION
5
Details of television systems
30
Transforming light or analogous information into electric information
335
using solid-state image sensors [SSIS]
369
SSIS architecture; Circuitry associated therewith
Applicants:
ソニーセミコンダクタソリューションズ株式会社 SONY SEMICONDUCTOR SOLUTIONS CORPORATION [JP/JP]; 神奈川県厚木市旭町四丁目14番1号 4-14-1, Asahicho, Atsugi-shi, Kanagawa 2430014, JP
Inventors:
吉田 慎一 YOSHIDA, Shinichi; JP
丸山 俊介 MARUYAMA, Shunsuke; JP
松本 良輔 MATSUMOTO, Ryosuke; JP
萬田 周治 MANDA, Shuji; JP
渡邊 知雅 WATANABE, Tomomasa; JP
Agent:
特許業務法人つばさ国際特許事務所 TSUBASA PATENT PROFESSIONAL CORPORATION; 東京都新宿区新宿1丁目15番9号さわだビル3階 3F, Sawada Building, 15-9, Shinjuku 1-chome, Shinjuku-ku, Tokyo 1600022, JP
Priority Data:
2015-24223511.12.2015JP
Title (EN) LIGHT-RECEIVING ELEMENT, MANUFACTURING METHOD FOR LIGHT-RECEIVING ELEMENT, IMAGING ELEMENT, AND ELECTRONIC DEVICE
(FR) ÉLÉMENT DE RÉCEPTION DE LUMIÈRE, PROCÉDÉ DE FABRICATION D'ÉLÉMENT DE RÉCEPTION DE LUMIÈRE, ÉLÉMENT D'IMAGERIE, ET DISPOSITIF ÉLECTRONIQUE
(JA) 受光素子、受光素子の製造方法、撮像素子および電子機器
Abstract:
(EN) This light-receiving element includes: a substrate; a photoelectric conversion layer formed on the substrate, said photoelectric conversion layer including a first compound semiconductor and generating a charge by absorbing a wavelength in the infrared range; a semiconductor layer, formed on the photoelectric conversion layer, said semiconductor layer including a second compound conductor and having an opening in a selective region; and an electrode which fills the opening in the semiconductor layer and which is electrically connected to the photoelectric conversion layer.
(FR) Cet élément de réception de lumière comprend : un substrat ; une couche de conversion photoélectrique formée sur le substrat, ladite couche de conversion photoélectrique comprenant un premier semi-conducteur composé et générant une charge par absorption d'une longueur d'onde dans la plage infrarouge ; une couche semi-conductrice, formée sur la couche de conversion photoélectrique, ladite couche semi-conductrice comprenant un second conducteur composé et ayant une ouverture dans une région sélective ; et une électrode qui remplit l'ouverture dans la couche semi-conductrice et qui est électriquement connectée à la couche de conversion photoélectrique.
(JA) この受光素子は、基板と、基板上に形成されると共に第1の化合物半導体を含み、赤外領域の波長を吸収して電荷を発生する光電変換層と、光電変換層上に形成されると共に第2の化合物半導体を含み、かつ選択的な領域に開口を有する半導体層と、半導体層の開口を埋め込むと共に光電変換層に電気的に接続された電極とを備える。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
US20180350851