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1. (WO2017098211) DATA BUFFER
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/098211 International Application No.: PCT/GB2016/053749
Publication Date: 15.06.2017 International Filing Date: 30.11.2016
IPC:
G11C 7/10 (2006.01) ,G06F 1/26 (2006.01) ,G11C 5/14 (2006.01) ,G11C 11/4074 (2006.01) ,G11C 11/419 (2006.01) ,G11C 16/30 (2006.01) ,G11C 11/4093 (2006.01)
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
7
Arrangements for writing information into, or reading information out from, a digital store
10
Input/output (I/O) data interface arrangements, e.g. I/O data control circuits, I/O data buffers
G PHYSICS
06
COMPUTING; CALCULATING; COUNTING
F
ELECTRIC DIGITAL DATA PROCESSING
1
Details not covered by groups G06F3/-G06F13/82
26
Power supply means, e.g. regulation thereof
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
5
Details of stores covered by group G11C11/63
14
Power supply arrangements
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
11
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21
using electric elements
34
using semiconductor devices
40
using transistors
401
forming cells needing refreshing or charge regeneration, i.e. dynamic cells
4063
Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
407
for memory cells of the field-effect type
4074
Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
11
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21
using electric elements
34
using semiconductor devices
40
using transistors
41
forming cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
413
Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
417
for memory cells of the field-effect type
419
Read-write (R-W) circuits
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
16
Erasable programmable read-only memories
02
electrically programmable
06
Auxiliary circuits, e.g. for writing into memory
30
Power supply circuits
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
11
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21
using electric elements
34
using semiconductor devices
40
using transistors
401
forming cells needing refreshing or charge regeneration, i.e. dynamic cells
4063
Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
407
for memory cells of the field-effect type
409
Read-write (R-W) circuits
4093
Input/output (I/O) data interface arrangements, e.g. data buffers
Applicants:
ARM LIMITED [GB/GB]; 110 Fulbourn Road Cherry Hinton Cambridge CB1 9NJ, GB
Inventors:
MYERS, James Edward; GB
FLYNN, David Walter; GB
Agent:
TURNER, James Arthur; GB
Priority Data:
1521797.910.12.2015GB
Title (EN) DATA BUFFER
(FR) TAMPON DE DONNÉES
Abstract:
(EN) A data buffer comprises data storage circuitry; input circuitry to input data to be stored by the data storage circuitry at a first operating voltage; output circuitry to output stored data from the data storage circuitry at a second operating voltage different to the first operating voltage; and control circuitry to control an operating voltage of the data storage circuitry to be substantially the first operating voltage during a data input operation by the input circuitry and to be substantially the second operating voltage during a data output operation by the output circuitry.
(FR) L'invention concerne un tampon de données qui comprend des circuits de stockage de données ; des circuits d'entrée pour entrer des données à faire stocker par les circuits de stockage de données à une première tension de fonctionnement ; des circuits de sortie pour sortir des données stockées dans les circuits de stockage de données à une seconde tension de fonctionnement différente de la première tension de fonctionnement ; des circuits de commande pour commander une tension de fonctionnement des circuits de stockage de données pour être sensiblement la première tension de fonctionnement pendant une opération d'entrée de données par les circuits d'entrée et pour être sensiblement la seconde tension de fonctionnement pendant une opération de sortie de données par les circuits de sortie.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
US20190164582