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1. (WO2017098092) CONTROL METHOD AND BIAS SUPPLY FOR A PLASMA-IMMERSION ION IMPLANTER
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/098092 International Application No.: PCT/FR2016/000198
Publication Date: 15.06.2017 International Filing Date: 05.12.2016
IPC:
H01J 37/32 (2006.01) ,C23C 14/48 (2006.01) ,H01L 21/223 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
J
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37
Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32
Gas-filled discharge tubes
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22
characterised by the process of coating
48
Ion implantation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
22
Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions; Redistribution of impurity materials, e.g. without introduction or removal of further dopant
223
using diffusion into, or out of, a solid from or into a gaseous phase
Applicants:
ION BEAM SERVICES [FR/FR]; ZI Peynier-Rousset rue Gaston Imbert prolongée 13790 Peynier, FR
Inventors:
TORREGROSA, Frank; FR
ROUX, Laurent; FR
Agent:
RENAUD-GOUD Conseil; 5, rue de Montigny F-13100 Aix-en-Provence, FR
Priority Data:
15/0256910.12.2015FR
Title (EN) CONTROL METHOD AND BIAS SUPPLY FOR A PLASMA-IMMERSION ION IMPLANTER
(FR) PROCÉDÉ DE COMMANDE ET ALIMENTATION DE POLARISATION POUR UN IMPLANTEUR IONIQUE FONCTIONNANT EN IMMERSION PLASMA
Abstract:
(EN) The invention relates to a control method for a plasma-immersion implanter, comprising: an implantation phase (1) during which the plasma supply AP is ignited and the substrate is biased negatively S; a neutralisation phase (2) during which the plasma AP is ignited and a positive or zero bias is applied to the substrate S; a suppression phase (3) during which the plasma AP is extinguished; an expulsion phase (4) comprising the expulsion of negatively charged particles at the substrate, during which the plasma AP is extinguished. The method is characterised in that the duration of the expulsion phase is greater than 5 μs. The invention also relates to a bias supply for an implanter.
(FR) La présente invention concerne un procédé de commande pour un implanteur fonctionnant en immersion plasma comportant : - une phase d'implantation [1] durant laquelle le plasma AP est allumé et le substrat est polarisé négativement S, - une phase de neutralisation [2] durant laquelle le plasma AP est allumé et le substrat se voit appliquer une polarisation positive ou nulle S, - une phase de suppression [3] durant laquelle le plasma AP est éteint. - une phase d'expulsion [4] de particules chargées négativement au niveau du substrat durant laquelle le plasma est éteint AP. Le procédé est remarquable en ce que la durée de cette phase d'expulsion est supérieure à 5 με. Ladite invention vise aussi une alimentation de polarisation d'un implanteur.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: French (FR)
Filing Language: French (FR)
Also published as:
KR1020180091082EP3387666US20180358207CN109075005