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1. (WO2017096975) METHOD FOR PREPARING VERTICAL LIGHT-EMITTING DIODE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/096975 International Application No.: PCT/CN2016/097868
Publication Date: 15.06.2017 International Filing Date: 02.09.2016
IPC:
H01L 33/46 (2010.01) ,H01L 33/62 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
44
characterised by the coatings, e.g. passivation layer or anti-reflective coating
46
Reflective coating, e.g. dielectric Bragg reflector
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
62
Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
Applicants:
天津三安光电有限公司 TIANJIN SANAN OPTOELECTRONICS CO., LTD. [CN/CN]; 中国天津市 西青区华苑产业区海泰南道20号 No.20 Haitainan Road, Huayuan New Technology Industry Development Area, Xiqing District Tianjin 300384, CN
Inventors:
王进 WANG, Jin; CN
卢怡安 LU, Yi-an; CN
吴俊毅 WU, Chun-Yi; CN
陶青山 TAO, Ching-Shan; CN
王笃祥 WANG, Duxiang; CN
Priority Data:
201510890183.308.12.2015CN
Title (EN) METHOD FOR PREPARING VERTICAL LIGHT-EMITTING DIODE
(FR) PROCÉDÉ DE PRÉPARATION DE DIODE ÉLECTROLUMINESCENTE VERTICALE
(ZH) 垂直发光二极管的制作方法
Abstract:
(EN) Provided is a method for preparing a vertical light-emitting diode. The method is mainly applied to an infrared light-emitting diode. By heating a cavity in a growth process of a reflecting layer, prediffusion of metal molecules of the reflecting layer in an epitaxial layer, so as to alleviate the diffusion of the metal molecules of the reflecting layer towards the epitaxial layer in high-temperature fusion of the reflecting layer and the epitaxial layer, and reduce the blackening degree of a common ohmic contact hole.
(FR) L'invention concerne un procédé de préparation d'une diode électroluminescente verticale. Le procédé s'applique principalement à une diode électroluminescente infrarouge. Par chauffage d'une cavité dans un processus de croissance d'une couche réfléchissante, des molécules de métal de la couche réfléchissante peuvent être prédiffusées dans une couche épitaxiale, ce qui permet d'atténuer la diffusion des molécules de métal de la couche réfléchissante vers la couche épitaxiale dans la fusion à haute température de la couche réfléchissante et de la couche épitaxiale, et de réduire le degré de noircissement d'un trou de contact ohmique commun.
(ZH) 提供了一种垂直发光二极管的制作方法,其主要应用在红外发光二极管中,通过在反射层生长过程中对腔体的加热,实现反射层的金属分子在外延层中预扩散,以减缓反射层与外延层高温熔合中反射层金属分子向外延层的扩散,减小常见欧姆接触孔洞发黑的程度。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)