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1. (WO2017096649) ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING SAME
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/096649 International Application No.: PCT/CN2015/098964
Publication Date: 15.06.2017 International Filing Date: 25.12.2015
IPC:
H01L 27/12 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12
the substrate being other than a semiconductor body, e.g. an insulating body
Applicants:
深圳市华星光电技术有限公司 SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD. [CN/CN]; 中国广东省深圳市 光明新区塘明大道9-2号 NO.9-2, Tangming Rd, Guangming New District Shenzhen, Guangdong 518132, CN
Inventors:
徐洪远 XU, Hongyuan; CN
Agent:
深圳市威世博知识产权代理事务所(普通合伙) CHINA WISPRO INTELLECTUAL PROPERTY LLP.; 中国广东省深圳市 南山区高新区粤兴三道8号中国地质大学产学研基地中地大楼A806 Room A806 Zhongdi Building, China University of Geosciences Base, No.8 Yuexing 3rd Road, High-Tech Industrial Estate, Nanshan District Shenzhen, Guangdong 518057, CN
Priority Data:
201510894818.7 07.12.2015CN
Title (EN) ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING SAME
(FR) SUBSTRAT DE MATRICE ET PROCÉDÉ POUR SA FABRICATION
(ZH) 阵列基板及其制造方法
Abstract:
(EN) An array substrate and a method for manufacturing same. IGZO patterns (25) as well as first electrode bars (221), first channels (263) and a second metal layer (26) in regions corresponding to the IGZO patterns (25) form a first transistor (M1) of a CMOS phase inverter (30); OSC patterns (27) as well as second electrode bars (222), second channels (264) and the second metal layer (26) in regions corresponding to the OSC patterns (27) form a second transistor (M2) of the CMOS phase inverter (30). Therefore, a CMOS phase inverter (30) or a CMOS ring oscillator (40) of an array substrate can be manufactured based on IGZO and OSC.
(FR) Substrat de matrice et procédé pour sa fabrication. Des motifs (25) en IGZO ainsi que des premières barres (221) d'électrodes, des premiers canaux (263) et une deuxième couche (26) de métal dans des régions correspondant aux motifs (25) en IGZO forment un premier transistor (M1) d'un inverseur (30) de phase à CMOS; des motifs (27) d'OSC ainsi que des deuxièmes barres (222) d'électrodes, des deuxièmes canaux (264) et la deuxième couche (26) de métal dans des régions correspondant aux motifs (27) d'OSC forment un deuxième transistor (M2) de l'inverseur (30) de phase à CMOS. Par conséquent, un inverseur (30) de phase à CMOS ou un oscillateur annulaire (40) à CMOS d'un substrat de matrice peut être fabriqué à partir d'IGZO et d'OSC.
(ZH) 一种阵列基板及其制造方法,由IGZO图案(25)及其对应区域的第一电极条(221)、第一沟道(263)和第二金属层(26)形成CMOS反相器(30)的第一晶体管(M1)、由OSC图案(27)及其对应区域的第二电极条(222)、第二沟道(264)和第二金属层(26)形成CMOS反相器(30)的第二晶体管(M2),从而实现基于IGZO和OSC制造阵列基板的CMOS反相器(30)或CMOS环形振荡器(40)。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)
Also published as:
US20170229517