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1. (WO2017096057) SYSTEMS AND METHODS FOR PRODUCTION OF LOW OXYGEN CONTENT SILICON
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/096057 International Application No.: PCT/US2016/064448
Publication Date: 08.06.2017 International Filing Date: 01.12.2016
IPC:
C30B 15/20 (2006.01) ,C30B 29/06 (2006.01) ,C30B 15/30 (2006.01)
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
15
Single-crystal growth by pulling from a melt, e.g. Czochralski method
20
Controlling or regulating
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02
Elements
06
Silicon
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
15
Single-crystal growth by pulling from a melt, e.g. Czochralski method
30
Mechanisms for rotating or moving either the melt or the crystal
Applicants:
GLOBALWAFERS CO., LTD.; No. 8 Industrial East Road 2 Science-Based Industrial Park Hsinchu, Taiwan, CN
Inventors:
SAMANTA, Gaurab; US
DAGGOLU, Parthiv; US
BHAGAVAT, Sumeet; US
BASAK, Soubir; US
ZHANG, Nan; US
Agent:
MUNSELL, Michael G.; US
RAYMOND, Donald D., Jr; US
SCHUTH, Richard A.; US
KEPPEL, Nicholas A.; US
POLAND, Eric G.; US
MUELLER, Jacob R.; US
RASCHE, Patrick W.; US
SLATER, Brian T.; US
VANDER MOLEN, Michael J.; US
COYLE, Patrick; US
HARPER, James D.; US
ALLEN, Derick E.; US
ATKINS, Bruce T.; US
BEULICK, John S.; US
BRENNAN, Patrick E.; US
BRIDGE, Richard L.; US
BROPHY, Richard L.; US
FITZGERALD, Daniel M.; US
FLOREK, Erin M.; US
GOFF, Christopher M.; US
HARPER, Jesse S.; US
HEINEN, James M., Jr.; US
HILMERT, Laura J.; US
HOEKEL, Jennifer E.; US
REESER, Robert B., III; US
THOMAS, Mark A.; US
THOMAS, Richard; US
WULLER, Adam R.; US
ZYCHLEWICZ, William J.; US
LONGMEYER, Michael H.; US
AMODIO, Lucas M.; US
BLOCK, Zachary J.; US
MOLLER-JACOBS, Rose L.; US
MCCAY, Michael G.; US
VANVLIET, David S.; US
DINGLEDINE, Grant A.; US
BUTLER, Christopher H.; US
SNIDER, Josh C.; US
MCCOLLUM, Darin L.; US
VANENGELEN, Catherine E.; US
HENSON, James W.; US
SOOTER, Miranda M.; US
Priority Data:
62/263,35504.12.2015US
Title (EN) SYSTEMS AND METHODS FOR PRODUCTION OF LOW OXYGEN CONTENT SILICON
(FR) SYSTÈMES ET PROCÉDÉS POUR LA PRODUCTION DE SILICIUM À FAIBLE TENEUR EN OXYGÈNE
Abstract:
(EN) A method for producing a silicon ingot includes withdrawing a seed crystal from a melt that includes melted silicon in a crucible that is enclosed in a vacuum chamber containing a cusped magnetic field. At least one process parameter is regulated in at least two stages, including a first stage corresponding to formation of the silicon ingot up to an intermediate ingot length, and a second stage corresponding to formation of the silicon ingot from the intermediate ingot length to the total ingot length. During the second stage process parameter regulation may include reducing a crystal rotation rate, reducing a crucible rotation rate, and/or increasing a magnetic field strength relative to the first stage.
(FR) L'invention concerne un procédé pour la production d'un lingot de silicium consistant à tirer un germe cristallin à partir d'une masse fondue comprenant du silicium fondu contenue dans un creuset qui est enfermé dans une chambre sous vide contenant un champ magnétique cuspidé. Au moins un paramètre de procédé est réglé en au moins deux étapes, une première étape correspondant à la formation du lingot de silicium jusqu'à une longueur de lingot intermédiaire et une seconde étape correspondant à la formation du lingot de silicium de la longueur de lingot intermédiaire jusqu'à la longueur totale du lingot. Pendant la seconde étape le réglage du paramètre de procédé peut consister à réduire une vitesse de rotation de cristal, réduire une vitesse de rotation de creuset et/ou augmenter une intensité de champ magnétique par rapport à la première étape.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
SG11201804672QEP3384072KR1020180101358US20180355509CN109154103