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1. (WO2017096032) WIDE BAND GAP DEVICE INTEGRATED CIRCUIT ARCHITECTURE ON ENGINEERED SUBSTRATE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/096032 International Application No.: PCT/US2016/064405
Publication Date: 08.06.2017 International Filing Date: 01.12.2016
IPC:
H01L 21/20 (2006.01) ,C04B 35/00 (2006.01) ,C30B 29/06 (2006.01) ,C30B 29/36 (2006.01) ,C30B 33/10 (2006.01) ,F21K 99/00 (2016.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
C CHEMISTRY; METALLURGY
04
CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
B
LIME; MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
35
Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02
Elements
06
Silicon
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10
Inorganic compounds or compositions
36
Carbides
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
33
After-treatment of single crystals or homogeneous polycrystalline material with defined structure
08
Etching
10
in solutions or melts
F MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
21
LIGHTING
K
LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
99
Subject matter not provided for in other groups of this subclass
Applicants:
QROMIS, INC. [US/US]; 2306 Walsh Avenue Santa Clara, California 95051, US
Inventors:
ODNOBLYUDOV, Vladimir; US
BASCERI, Cem; US
Agent:
LARGENT, Craig C.; US
LIU, Rong; US
FU, Zhenhai; US
Priority Data:
62/263,46204.12.2015US
Title (EN) WIDE BAND GAP DEVICE INTEGRATED CIRCUIT ARCHITECTURE ON ENGINEERED SUBSTRATE
(FR) ARCHITECTURE DE CIRCUIT INTÉGRÉ POUR DISPOSITIF À LARGE BANDE INTERDITE SUR SUBSTRAT MODIFIÉ
Abstract:
(EN) Disclosed herein are wide band gap integrated circuits, such as gallium nitride (GaN) integrated circuits, including a plurality of groups of epitaxial layers formed on an engineered substrate, and methods of making the WBG integrated circuits. The epitaxial layers have a coefficient of thermal expansion (CTE) substantially matching the CTE of the engineered substrate. Mesas, internal interconnects, and electrodes configure each group of epitaxial layers into a WBG device. External interconnects connect different WBG devices into a WBG integrated circuit. The CTE matching allows the formation of epitaxial layers with reduced dislocation density and an overall thickness of greater than 10 microns on a six-inch or larger engineered substrate. The large substrate size and thick WBG epitaxial layers allow a large number of high density WBG integrated circuits to be fabricated on a single substrate.
(FR) La présente invention concerne des circuits intégrés à large bande interdite, tels que des circuits intégrés au nitrure de gallium (GaN), comprenant une pluralité de groupes de couches épitaxiales formées sur un substrat modifié, et des procédés de fabrication des circuits intégrés à WBG. Les couches épitaxiales présentent un coefficient de dilatation thermique (CDT) coïncidant sensiblement avec le CDT du substrat modifié. Des plateaux, des interconnexions internes et des électrodes configurent chaque groupe de couches épitaxiales pour donner un dispositif à WBG. Des interconnexions externes relient différents dispositifs à WBG pour donner un circuit intégré à WBG. La concordance des CDT permet la formation de couches épitaxiales présentant une densité réduite de dislocations et une épaisseur d'ensemble supérieure à 10 microns sur un substrat modifié de six pouces ou plus grand. La grande taille du substrat et les couches épitaxiales épaisses à WBG permettent de réaliser un grand nombre de circuits intégrés à WBG à haute densité sur un seul substrat.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
SG11201804490VKR1020180095560CN108541335