Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2017095678) FERROELECTRIC CAPACITOR, FERROELECTRIC FIELD EFFECT TRANSISTOR, AND METHOD USED IN FORMING AN ELECTRONIC COMPONENT COMPRISING CONDUCTIVE MATERIAL AND FERROELECTRIC MATERIAL
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/095678 International Application No.: PCT/US2016/063046
Publication Date: 08.06.2017 International Filing Date: 21.11.2016
IPC:
H01L 29/51 (2006.01) ,H01L 21/28 (2006.01) ,H01L 49/02 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40
Electrodes
43
characterised by the materials of which they are formed
49
Metal-insulator semiconductor electrodes
51
Insulating materials associated therewith
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28
Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
49
Solid state devices not provided for in groups H01L27/-H01L47/99; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
02
Thin-film or thick-film devices
Applicants:
MICRON TECHNOLOGY, INC. [US/US]; MS 1-525 8000 South Federal Way Boise, ID 83716, US
Inventors:
CHAVAN, Ashonita, A.; US
RAMASWAMY, Durai, Vishak Nirmal; US
NAHAR, Manuj; US
Agent:
MATKIN, Mark S.; US
SHAURETTE, James, D.; US
MATKIN, Mark, S.; US
HENDRICKSEN, Mark, W.; US
LATWESEN, David, G.; US
Priority Data:
14/958,18203.12.2015US
Title (EN) FERROELECTRIC CAPACITOR, FERROELECTRIC FIELD EFFECT TRANSISTOR, AND METHOD USED IN FORMING AN ELECTRONIC COMPONENT COMPRISING CONDUCTIVE MATERIAL AND FERROELECTRIC MATERIAL
(FR) CONDENSATEUR FERROÉLECTRIQUE, TRANSISTOR FERROÉLECTRIQUE À EFFET DE CHAMP, ET PROCÉDÉ UTILISÉ DANS LA FORMATION D'UN COMPOSANT ÉLECTRONIQUE COMPORTANT UN MATÉRIAU CONDUCTEUR ET UN MATÉRIAU FERROÉLECTRIQUE
Abstract:
(EN) A method used in forming an electronic component comprising conductive material and ferroelectric material comprises forming a non-ferroelectric metal oxide-comprising insulator material over a substrate. A composite stack comprising at least two different composition non-ferroelectric metal oxides is formed over the substrate. The composite stack has an overall conductivity of at least 1 x 102 Siemens/cm. The composite stack is used to render the non- ferroelectric metal oxide-comprising insulator material to be ferroelectric. Conductive material is formed over the composite stack and the insulator material. Ferroelectric capacitors and ferroelectric field effect transistors independent of method of manufacture are also disclosed.
(FR) Un procédé utilisé dans la formation d'un composant électronique comportant un matériau conducteur et un matériau ferroélectrique comporte la formation d'un matériau isolant non ferroélectrique comportant un oxyde métallique par-dessus un substrat. Un empilement composite comportant au moins deux oxydes métalliques non ferroélectriques de composition différente est formé par-dessus le substrat. L'empilement composite présente une conductivité d'ensemble d'au moins 1x102 siemens/cm. L'empilement composite est utilisé pour rendre ferroélectrique le matériau isolant non ferroélectrique comportant un oxyde métallique. Du matériau conducteur est formé par-dessus l'empilement composite et le matériau isolant. L'invention concerne également des condensateurs ferroélectriques et des transistors ferroélectriques à effet de champ indépendants du procédé de fabrication.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
KR1020180076369CN108369956EP3384532IN201827024543