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1. (WO2017095385) STACKED DIE PACKAGE WITH THROUGH-MOLD THERMALLY CONDUCTIVE STRUCTURES BETWEEN A BOTTOM DIE AND A THERMALLY CONDUCTIVE MATERIAL
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/095385 International Application No.: PCT/US2015/063046
Publication Date: 08.06.2017 International Filing Date: 30.11.2015
IPC:
H01L 23/34 (2006.01) ,H01L 23/12 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
34
Arrangements for cooling, heating, ventilating or temperature compensation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
12
Mountings, e.g. non-detachable insulating substrates
Applicants:
INTEL CORPORATION [US/US]; 2200 Mission College Boulevard Santa Clara, California 95054, US
Inventors:
JHA, Chandra M.; US
LI, Eric; US
Agent:
BRASK, Justin, K.; US
Priority Data:
Title (EN) STACKED DIE PACKAGE WITH THROUGH-MOLD THERMALLY CONDUCTIVE STRUCTURES BETWEEN A BOTTOM DIE AND A THERMALLY CONDUCTIVE MATERIAL
(FR) BOÎTIER DE PUCES EMPILÉES COMPRENANT STRUCTURES THERMOCONDUCTRICES S'ÉTENDANT À TRAVERS LE MOULE ENTRE UNE PUCE INFÉRIEURE ET UNE MATIÈRE THERMOCONDUCTRICE
Abstract:
(EN) An apparatus is described that includes a first semiconductor die. A second semiconductor die is stacked on the first semiconductor die. The first semiconductor die has a larger surface area than the second semiconductor die such that there exists a peripheral region of the first semiconductor die that is not covered by the second semiconductor die. The apparatus includes thermally conductive material above the second semiconductor die. The apparatus includes a compound mold between the thermally conductive materila and both the second semiconductor die and the peripheral region of the first semiconductor die. The apparatus includes a thermally conductive structure extending through the compound mold that thermally couples the peripheral region to the thermally conductive material.
(FR) L'invention se rapporte à un appareil qui comprend une première puce semi-conductrice. Une seconde puce semi-conductrice est empilée sur la première puce semi-conductrice. La première puce semi-conductrice présente une surface plus grande que la seconde puce semi-conductrice de sorte qu'il existe une zone périphérique de la première puce semi-conductrice qui n'est pas couverte par la seconde puce semi-conductrice. L'appareil comprend une matière thermoconductrice au-dessus de la seconde puce semi-conductrice. L'appareil comprend un moule composite entre la matière thermoconductrice et à la fois la seconde puce semi-conductrice et la région périphérique de la première puce semi-conductrice. L'appareil comprend une structure thermoconductrice s'étendant à travers le moule composite qui couple thermiquement la zone périphérique à la matière thermoconductrice.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
DE112015007162US20180308784