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1. (WO2017094502) SOLID-STATE IMAGE CAPTURE DEVICE, METHOD FOR MANUFACTURING SAME, AND ELECTRONIC DEVICE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/094502 International Application No.: PCT/JP2016/083902
Publication Date: 08.06.2017 International Filing Date: 16.11.2016
IPC:
H01L 27/14 (2006.01) ,H01L 23/28 (2006.01) ,H04N 5/369 (2011.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14
including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
28
Encapsulation, e.g. encapsulating layers, coatings
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
N
PICTORIAL COMMUNICATION, e.g. TELEVISION
5
Details of television systems
30
Transforming light or analogous information into electric information
335
using solid-state image sensors [SSIS]
369
SSIS architecture; Circuitry associated therewith
Applicants:
ソニーセミコンダクタソリューションズ株式会社 SONY SEMICONDUCTOR SOLUTIONS CORPORATION [JP/JP]; 神奈川県厚木市旭町四丁目14番1号 4-14-1, Asahi-cho, Atsugi-shi, Kanagawa 2430014, JP
Inventors:
三島 賢治 MISHIMA Kenji; JP
Agent:
西川 孝 NISHIKAWA Takashi; JP
稲本 義雄 INAMOTO Yoshio; JP
Priority Data:
2015-23345130.11.2015JP
Title (EN) SOLID-STATE IMAGE CAPTURE DEVICE, METHOD FOR MANUFACTURING SAME, AND ELECTRONIC DEVICE
(FR) DISPOSITIF DE CAPTURE D'IMAGE À SEMI-CONDUCTEURS, SON PROCÉDÉ DE FABRICATION, ET DISPOSITIF ÉLECTRONIQUE
(JA) 固体撮像装置およびその製造方法、並びに電子機器
Abstract:
(EN) The present technology relates to a solid-state image capture device that enables an increase in yield, a method for manufacturing the same, and an electronic device. The solid-state image capture device is provided with: an optical sensor including a light receiving portion; and a cover glass disposed on the light receiving portion side of the optical sensor. The cover glass has a beveled portion in an edge portion surrounding an optical sensor-side surface thereof. The present technology is applicable, for example, to a CMOS image sensor package.
(FR) La présente invention concerne un dispositif de capture d'image à semi-conducteurs qui permet une augmentation du rendement, son procédé de fabrication, et un dispositif électronique. Le dispositif de capture d'image à semi-conducteurs selon l'invention comprend : un capteur optique comprenant une partie de réception de lumière ; et un verre de protection disposé côté partie de réception de lumière du capteur optique. Le verre de protection présente une partie biseautée dans une partie bord entourant sa surface côté capteur optique. La présente invention est applicable, par exemple, à un boîtier de capteur d'image CMOS.
(JA) 本技術は、歩留まりをより高くすることができるようにする固体撮像装置およびその製造方法、並びに電子機器に関する。 固体撮像装置は、受光部を有する光学センサと、光学センサの受光部側に設けられたカバーガラスとを備える。カバーガラスは、光学センサ側の面を囲う稜部に面取り部を有する。本技術は、例えばCMOSイメージセンサ用のパッケージに適用することができる。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
CN108292661US20180332245