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1. (WO2017094278) PHOTO SENSOR
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/094278 International Application No.: PCT/JP2016/068630
Publication Date: 08.06.2017 International Filing Date: 23.06.2016
IPC:
G01J 1/02 (2006.01) ,G01S 7/481 (2006.01) ,G01V 8/12 (2006.01) ,H01L 31/107 (2006.01) ,H01L 31/12 (2006.01)
G PHYSICS
01
MEASURING; TESTING
J
MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
1
Photometry, e.g. photographic exposure meter
02
Details
G PHYSICS
01
MEASURING; TESTING
S
RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
7
Details of systems according to groups G01S13/, G01S15/, G01S17/127
48
of systems according to group G01S17/58
481
Constructional features, e.g. arrangements of optical elements
G PHYSICS
01
MEASURING; TESTING
V
GEOPHYSICS; GRAVITATIONAL MEASUREMENTS; DETECTING MASSES OR OBJECTS; TAGS
8
Prospecting or detecting by optical means
10
Detecting, e.g. by using light barriers
12
using one transmitter and one receiver
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
in which radiation controls flow of current through the device, e.g. photoresistors
10
characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101
Devices sensitive to infra-red, visible or ultra-violet radiation
102
characterised by only one potential barrier or surface barrier
107
the potential barrier working in avalanche mode, e.g. avalanche photodiode
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
12
structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
Applicants:
シャープ株式会社 SHARP KABUSHIKI KAISHA [JP/JP]; 大阪府堺市堺区匠町1番地 1, Takumi-cho, Sakai-ku, Sakai City, Osaka 5908522, JP
Inventors:
瀧本 貴博 TAKIMOTO, Takahiro; --
夏秋 和弘 NATSUAKI, Kazuhiro; --
内田 雅代 UCHIDA, Masayo; --
Agent:
鮫島 睦 SAMEJIMA, Mutsumi; JP
Priority Data:
2015-23335330.11.2015JP
Title (EN) PHOTO SENSOR
(FR) PHOTODÉTECTEUR
(JA) 光センサ
Abstract:
(EN) The present invention is configured such that a light-receiving element (21) has a plurality of conductive films (28, 30, 32), at least one of which, except for the lowermost layer, is a light-blocking film (32) which blocks light in a region other than a light receiving region S of a substrate (22), wherein the light-receiving element (21) satisfies the condition H+h≥a/tan(θ), in which H [μm] is the thickness of the light-blocking layer (32), h [μm] is the thickness from the bottom surface of the conductive film (28) on the lowermost layer to the bottom surface of the light-blocking film (32), a [μm] is the size of the light-receiving region, which is the maximum outer dimension of the light-receiving region S, and θ [deg] is the minimum angle formed between the normal line of the plane of the substrate (22) and the light which, among the light incident on the substrate (22) through an opening (32a) in the light-blocking film (32), is the light which, on a plane both perpendicular to the plane of the substrate (22) and oriented in a direction set by the size of the light-receiving region S, passes through the edge of the opening (32a) in the light-blocking film (32) to be incident into a region of the light-receiving region S.
(FR) La présente invention est configurée de telle sorte qu'un élément de réception de lumière (21) a une pluralité de films conducteurs (28, 30, 32), dont au moins l'un, à l'exception de la couche la plus inférieure, est un film de blocage de lumière (32) qui bloque la lumière dans une région autre qu'une région de réception de lumière S d'un substrat (22), l'élément de réception de lumière (21) satisfaisant la condition H+h≥a/tan(θ), dans laquelle H [μm] est l'épaisseur de la couche de blocage de lumière (32), h [μm] est l'épaisseur entre la surface inférieure du film conducteur (28) sur la couche la plus inférieure et la surface inférieure du film de blocage de lumière (32), a [μm] est la taille de la région de réception de lumière, qui est la dimension externe maximale de la région de réception de lumière S, et θ [deg] est l'angle minimal formé entre la ligne normale au plan du substrat (22) et la lumière qui, parmi la lumière incidente sur le substrat (22) à travers une ouverture (32a) dans le film de blocage de lumière (32), est la lumière qui, sur un plan perpendiculaire au plan du substrat (22) et orienté dans une direction déterminée par la taille de la région de réception de lumière S, passe par le bord de l'ouverture (32a) dans le film de blocage de lumière (32) pour être incidente dans une région de la région de réception de lumière S.
(JA) 受光素子(21)は、複数の導電膜(28,30,32)のうちの最下層以外の少なくも1つは、基板(22)の受光領域S以外の領域を遮光する遮光膜(32)であり、遮光膜(32)の厚さをH[μm]とし、最下層の導電膜(28)の下面から遮光膜(32)の下面までの厚さをh[μm]とし、受光領域Sの最大外形寸法である受光領域サイズをa[μm]とし、遮光膜(32)の開口(32a)を介して基板(22)側に入射する光のうち、基板(22)平面に直交しかつ受光領域サイズaが定まる方向に沿った平面上において遮光膜(32)の開口(32a)の縁を通過して受光領域S上の領域内に入射する光と、基板(22)平面の法線とがなす最小角度をθ[deg]とした場合に、 H+h ≧ a/tan(θ) の条件を満たすように構成される。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)