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1. (WO2017094277) AVALANCHE PHOTODIODE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/094277 International Application No.: PCT/JP2016/068629
Publication Date: 08.06.2017 International Filing Date: 23.06.2016
Chapter 2 Demand Filed: 26.10.2016
IPC:
H01L 31/107 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
in which radiation controls flow of current through the device, e.g. photoresistors
10
characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101
Devices sensitive to infra-red, visible or ultra-violet radiation
102
characterised by only one potential barrier or surface barrier
107
the potential barrier working in avalanche mode, e.g. avalanche photodiode
Applicants:
シャープ株式会社 SHARP KABUSHIKI KAISHA [JP/JP]; 大阪府堺市堺区匠町1番地 1, Takumi-cho, Sakai-ku, Sakai City, Osaka 5908522, JP
Inventors:
夏秋 和弘 NATSUAKI, Kazuhiro; --
瀧本 貴博 TAKIMOTO, Takahiro; --
内田 雅代 UCHIDA, Masayo; --
Agent:
鮫島 睦 SAMEJIMA, Mutsumi; JP
Priority Data:
2015-23502601.12.2015JP
Title (EN) AVALANCHE PHOTODIODE
(FR) PHOTODIODE À AVALANCHE
(JA) アバランシェフォトダイオード
Abstract:
(EN) This avalanche photodiode is provided with: a first semiconductor layer (3) of a first conductivity type, which is formed in a substrate (1) of the first conductivity type; a second semiconductor layer (2) of a second conductivity type, which is formed below the first semiconductor layer (3); a third semiconductor layer (7) of the first conductivity type, which is formed in a shallow part of the first semiconductor layer (3) of the substrate and has a higher impurity concentration than the first semiconductor layer (3); a fourth semiconductor layer (6) of the first conductivity type, which is formed in a region directly below the third semiconductor layer (7) within the first semiconductor layer (3); a first contact (11) which is electrically connected to the first semiconductor layer (3); and a second contact (12) which is electrically connected to the second semiconductor layer (2). The impurity concentration of the fourth semiconductor layer (6) is higher than that of the first semiconductor layer (3) but lower than that of the third semiconductor layer (7).
(FR) La photodiode à avalanche selon la présente invention comprend : une première couche semi-conductrice (3) d'un premier type de conductivité, qui est formée dans un substrat du premier type de conductivité ; une deuxième couche semi-conductrice (2) d'un second type de conductivité, qui est formée au-dessous de la première couche semi-conductrice (3) ; une troisième couche semi-conductrice (7) du premier type de conductivité, qui est formée dans une partie peu profonde de la première couche semi-conductrice (3) du substrat et présente une concentration en impuretés supérieure à celle de la première couche semi-conductrice (3) ; une quatrième couche semi-conductrice (6) du premier type de conductivité, qui est formée dans une région directement au-dessous de la troisième couche semi-conductrice (7) dans la première couche semi-conductrice (3) ; un premier contact (11) qui est connecté électriquement à la première couche semi-conductrice (3) ; et un second contact (12) qui est connecté électriquement à la seconde couche semi-conductrice (2). La concentration en impuretés de la quatrième couche semi-conductrice (6) est supérieure à celle de la première couche semi-conductrice (3) mais inférieure à celle de la troisième couche semi-conductrice (7).
(JA) アバランシェフォトダイオードは、第1の導電型の基板(1)に形成された第1の導電型の第1半導体層(3)と、第1半導体層(3)下に形成された第2の導電型の第2半導体層(2)と、基板の第1半導体層(3)の浅い部分に形成され、第1半導体層(3)の不純物濃度よりも高濃度の第1の導電型の第3半導体層(7)と、第3半導体層(7)の直下の第1半導体層(3)内の領域に形成された第1の導電型の第4半導体層(6)と、第1半導体層(3)と電気的に接続された第1コンタクト(11)と、第2半導体層(2)と電気的に接続された第2コンタクト(12)を備える。第4半導体層(6)の不純物濃度は、第1半導体層(3)より高濃度でかつ第3半導体層(7)より低濃度である。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
CN108369968