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1. (WO2017093646) OPTOELECTRONIC DEVICE COMPRISING THREE-DIMENSIONAL SEMICONDUCTOR STRUCTURES IN AN AXIAL CONFIGURATION
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/093646 International Application No.: PCT/FR2016/053122
Publication Date: 08.06.2017 International Filing Date: 28.11.2016
IPC:
H01L 33/18 (2010.01) ,H01L 33/08 (2010.01) ,H01L 33/00 (2010.01) ,H01L 33/32 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
16
with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
18
within the light emitting region
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
08
with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
26
Materials of the light emitting region
30
containing only elements of group III and group V of the periodic system
32
containing nitrogen
Applicants:
COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES [FR/FR]; Bâtiment le Ponant D 25 rue Leblanc 75015 Paris, FR
ALEDIA [FR/FR]; 7 Parvis Louis Neel 38040 Grenoble, FR
Inventors:
ZHANG, Xin; FR
DAUDIN, Bruno-Jules; FR
GAYRAL, Bruno; FR
GILET, Philippe; FR
Agent:
LE GOALLER, Christophe; FR
DUPONT, Jean-Baptiste; FR
GUERIN, Jean-Philippe; FR
Priority Data:
156158930.11.2015FR
Title (EN) OPTOELECTRONIC DEVICE COMPRISING THREE-DIMENSIONAL SEMICONDUCTOR STRUCTURES IN AN AXIAL CONFIGURATION
(FR) DISPOSITIF OPTOELECTRONIQUE COMPORTANT DES STRUCTURES SEMICONDUCTRICES TRIDIMENSIONNELLES EN CONFIGURATION AXIALE
Abstract:
(EN) The invention relates to an optoelectronic device (1) comprising at least one three-dimensional semiconductor structure (2) extending along a longitudinal axis (Δ) substantially orthogonal to a plane of a substrate (3) on which same lies, and comprising: a first doped portion (10), extending from one surface of the substrate (3) along the longitudinal axis (Δ); an active portion (30) comprising a passivation layer (34) and at least one quantum well (32) covered laterally by said passivation layer (34), the quantum well (32) of the active portion (30) having a mean diameter greater than that of said first doped portion (10), said active portion (30) extending from the first doped portion (10) along the longitudinal axis (Δ); and a second doped portion (20), extending from the active portion (30) along the longitudinal axis (Δ). The invention is characterized in that the device comprises a plurality of three-dimensional semiconductor structures (2) extending substantially in parallel with one another, the active portions (30) of which are in mutual contact.
(FR) L'invention porte sur un dispositif optoélectronique (1) comportant au moins une structure semiconductrice tridimensionnelle (2) s'étendant suivant un axe longitudinal (Δ) sensiblement orthogonal à un plan d'un substrat (3) sur lequel elle repose, et comportant : une première portion dopée (10), s'étendant à partir d'une face du substrat (3) suivant l'axe longitudinal (Δ); une portion active (30) comportant une couche de passivation (34) et au moins un puits quantique (32) recouvert latéralement par ladite couche de passivation (34), le puits quantique (32) de la portion active (30) présentant un diamètre moyen supérieur à celui de ladite première portion dopée (10), ladite portion active (30) s'étendant à partir de la première portion dopée (10) suivant l'axe longitudinal (Δ); et une seconde portion dopée (20), s'étendant à partir de la portion active (30) suivant l'axe longitudinal (Δ); caractérisé en ce que le dispositif comporte une pluralité de structures semiconductrices tridimensionnelles (2) s'étendant de manière sensiblement parallèle les unes aux autres, dont les portions actives (30) sont en contact mutuel.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: French (FR)
Filing Language: French (FR)
Also published as:
FR3044470EP3384537KR1020180112764CN108713258US20180351037