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1. (WO2017093359) METHOD FOR OBTAINING A SEMI-POLAR NITRIDE LAYER ON A CRYSTALLINE SUBSTRATE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/093359 International Application No.: PCT/EP2016/079345
Publication Date: 08.06.2017 International Filing Date: 30.11.2016
IPC:
H01L 21/20 (2006.01) ,C30B 29/40 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10
Inorganic compounds or compositions
40
AIIIBV compounds
Applicants:
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES [FR/FR]; 25 rue Leblanc Bâtiment "Le Ponant D" 75015 Paris, FR
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE [FR/FR]; 3 Rue Michel Ange 75016 Paris, FR
Inventors:
FEUILLET, Guy; FR
EL KHOURY MAROUN, Michel; FR
VENNEGUES, Philippe; FR
ZUNIGA PEREZ, Jesus; FR
Agent:
PRIORI, Enrico; FR
Priority Data:
156161930.11.2015FR
Title (EN) METHOD FOR OBTAINING A SEMI-POLAR NITRIDE LAYER ON A CRYSTALLINE SUBSTRATE
(FR) PROCÉDÉ PERMETTANT D'OBTENIR SUR UN SUBSTRAT CRISTALLIN UNE COUCHE SEMI-POLAIRE DE NITRURE
Abstract:
(EN) A subject matter of the invention relates to a method for obtaining at least one semi-polar layer (480) of nitride (N), obtained using at least one from gallium (Ga), indium (In) and aluminium (Al), on an upper surface of a crystalline layer (410) made from silicon, characterised in that said method comprises the following steps: - etching, starting from the upper surface of the crystalline layer, of a plurality of parallel grooves (460) comprising at least two opposed inclined facets (330, 331), at least one (330) of said opposed facets (330, 331) having a crystalline orientation {111}; - masking the upper surface of the crystalline layer (410) in such a way that said facets (330) have a crystalline orientation {111} that is not masked; - epitaxially growing said semi-polar nitride layer (480) from said non-masked facets (330); characterised in that said etching is carried out starting from a stack comprising the crystalline layer (410) and at least one barrier layer (420) covered by the crystalline layer (30), and in that said etching etches said crystalline layer (410) in a selective manner with respect to said barrier layer (420) in such a way that said etching stops on contact with said barrier layer (420).
(FR) Un objet de l'invention concerne un procédé permettant d'obtenir au moins une couche semi-polaire (480) de nitrure (N) obtenue à partir d'au moins l'un parmi le gallium (Ga), indium (In) et aluminium (Al) sur une surface supérieure d'une couche cristalline (410) à base de silicium, caractérisé en ce que ledit procédé comprend les étapes suivantes: - graver à partir de la surface supérieure de la couche cristalline, une pluralité de rainures parallèles (460) comprenant au moins deux facettes inclinées opposées (330, 331), au moins l'une (330) desdites deux facettes opposées (330, 331) présentant une orientation cristalline {111}; - masquer la surface supérieure de la couche cristalline (410) de telle sorte que lesdites facettes (330) présentant une orientation cristalline {111} ne soient pas masquées; - croissance épitaxiale de ladite couche semi-polaire (480) de nitrure à partir desdites facettes (330) non masquées; caractérisé en ce que ladite gravure est effectuée à partir d'un empilement comprenant la couche cristalline (410) et au moins une couche d'arrêt (420) surmontée par la couche cristalline (30) et en ce que ladite gravure grave ladite couche cristalline (410) de manière sélective par rapport à ladite couche d'arrêt (420) de manière à ce que ladite gravure s'arrête au contact de ladite couche d'arrêt (420).
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: French (FR)
Filing Language: French (FR)
Also published as:
FR3044464KR1020180088878EP3384521US20180330941