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1. (WO2017093142) COMPONENT WITH A SILVER-CONTAINING QUINARY CONNECTION LAYER AND METHOD FOR PRODUCING SAME
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/093142 International Application No.: PCT/EP2016/078879
Publication Date: 08.06.2017 International Filing Date: 25.11.2016
IPC:
H01L 21/58 (2006.01) ,H01L 21/60 (2006.01) ,H01L 33/48 (2010.01) ,H01L 33/62 (2010.01) ,H05K 3/34 (2006.01) ,B23K 20/02 (2006.01) ,B23K 35/02 (2006.01) ,B23K 35/26 (2006.01) ,B23K 35/30 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50
Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
58
Mounting semiconductor devices on supports
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50
Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
60
Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
62
Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
K
PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
3
Apparatus or processes for manufacturing printed circuits
30
Assembling printed circuits with electric components, e.g. with resistor
32
electrically connecting electric components or wires to printed circuits
34
by soldering
B PERFORMING OPERATIONS; TRANSPORTING
23
MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
K
SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
20
Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
02
by means of a press
B PERFORMING OPERATIONS; TRANSPORTING
23
MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
K
SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
35
Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
02
characterised by mechanical features, e.g. shape
B PERFORMING OPERATIONS; TRANSPORTING
23
MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
K
SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
35
Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
22
characterised by the composition or nature of the material
24
Selection of soldering or welding materials proper
26
with the principal constituent melting at less than 400C
B PERFORMING OPERATIONS; TRANSPORTING
23
MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
K
SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
35
Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
22
characterised by the composition or nature of the material
24
Selection of soldering or welding materials proper
30
with the principal constituent melting at less than 1550°C
Applicants:
OSRAM OPTO SEMICONDUCTORS GMBH [DE/DE]; Leibnizstr. 4 93055 Regensburg, DE
Inventors:
WENDT, Mathias; DE
Agent:
EPPING HERMANN FISCHER PATENTANWALTSGESELLSCHAFT MBH; Schloßschmidstr. 5 80639 München, DE
Priority Data:
10 2015 120 773.730.11.2015DE
Title (DE) BAUELEMENT MIT EINER SILBER ENTHALTENDEN QUINTÄREN VERBINDUNGSSCHICHT UND VERFAHREN ZU DESSEN HERSTELLUNG
(EN) COMPONENT WITH A SILVER-CONTAINING QUINARY CONNECTION LAYER AND METHOD FOR PRODUCING SAME
(FR) ÉLÉMENT COMPORTANT UNE COUCHE DE LIAISON QUINTUPLE CONTENANT DE L'ARGENT, ET PROCÉDÉ DE PRODUCTION
Abstract:
(DE) Die Erfindung betrifft ein Bauelement (100) aufweisend eine erste Komponente (1), eine zweite Komponente (2), ein Verbindungselement (3), das zwischen der ersten Komponente (1) und der zweiten Komponente (2) angeordnet ist, wobei das Verbindungselement (3) zumindest eine erste Phase (31) aufweist, wobei die erste Phase (31) Silber (Me5) und mindestens vier weitere Metalle (Me1, Me2, Me3, Me4) aufweist, wobei die Metalle voneinander verschieden sind und geeignet sind, bei einer Verarbeitungstemperatur von kleiner 200 °C zu reagieren, so dass ein thermomechanisch stabiles Verbindungselement (3) erzeugt ist. Das Verbindungselement (3) kann auch eine zweite Phase (32) aufweisen, die mit der ersten Phase (31) als Schichtsystem ausgeformt ist, wobei die zweite Phase (32) Silber und mindestens zwei weitere Metalle aufweist, die auch in der ersten Phase (31) vorhanden sind, wobei der Anteil (c15) an Silber in der ersten Phase (31) größer als der Anteil (c25) an Silber in der jeweiligen zweiten Phase (32) ist. Me1 kann Nickel, Platin oder Palladium sein, Me2 kann Indium sein, Me3 kann Zinn sein und Me4 kann Gold sein. Die zweite Komponente (2) kann eine lichtemittierende Leuchtdiode (kurz LED) umfassen. Im Verfahren zur Herstellung des Bauelements (100) werden Schichten aus den Metallen (Me1-Me5) auf die erste und/oder zweite Komponente (1, 2) aufgebracht und auf maximal 200 °C zur Ausbildung des Verbindungselements (3) geheizt.
(EN) The invention relates to a component (100) which has a first component (1), a second component (2), and a connection element (3) which is arranged between the first component (1) and the second component (2). The connection element (3) has at least one first phase (31) which has silver (Me5) and at least four additional metals (Me1, Me2, Me3, Me4). The metals differ from one another and are suitable for reacting at a machining temperature of less than 200 °C such that a thermomechanically stable connection element (3) is produced. The connection element (3) can also have a second phase (32) which is formed as a layer system together with the first phase (31), the second phase (32) has silver and at least two additional metals that are also present in the first phase (31). The content (c15) of silver in the first phase (31) is greater than the content (c25) of silver in the second phase (32). Me1 can be nickel, platinum, or palladium; Me2 can be indium; Me3 can be tin; and Me4 can be gold. The second component (2) can comprise a light-emitting diode (LED for short). In the method for producing the component (100), layers of the metals (Me1-Me5) are applied onto the first and/or second component (1, 2) and heated maximally to 200 °C in order to form the connection element (3).
(FR) L'invention concerne un élément (100) comprenant un premier constituant (1), un second constituant (2), un élément de liaison (3) interposé entre le premier constituant (1) et le second constituant (2). L'élément de liaison (3) comprend au moins une première phase (31). La première phase (31) contient de l'argent (Me5) et au moins quatre autres métaux (Me1, Me2, Me3, Me4). Les métaux sont différents les uns des autres et sont appropriés pour réagir à une température de traitement inférieure à 200°C de façon à produire un élément de liaison (3) thermo-mécaniquement stable. L'élément de liaison (3) peut également contenir une seconde phase (32) formée avec la première phase (31) en tant que système de couches. La seconde phase (32) contient de l'argent et au moins deux autres métaux également présents dans la première phase (31). La proportion (c15) d'argent dans la première phase (31) est supérieure à la proportion (c25) d'argent dans la seconde phase (32) respective. Me1 peut être le nickel, le platine ou le palladium, Me2 peut être l'indium, Me3 peut être l'étain et Me4 peut être l'or. Le second constituant (2) peut comporter une diode luminescente (en abrégé LED). Dans le procédé de production de l'élément (100), des couches de métaux (Me1-ME5) sont appliquées sur le premier et/ou second constituant (1, 2) et chauffées à un maximum de 200°C pour former l'élément de liaison (3).
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: German (DE)
Filing Language: German (DE)